HIT HM62W16258BLTT-5, HM62W16258BLTT-5SL, HM62W16258BLTT-7, HM62W16258BLTT-7SL Datasheet

HM62W16258B Series

4 M SRAM (256-kword × 16-bit)

ADE-203-976B (Z)

Rev. 2.0

Oct. 14, 1999

Description

The Hitachi HM62W16258B Series is 4-Mbit static RAM organized 262,144-word × 16-bit. HM62W16258B
Series has realized higher density, higher performance and low power consumption by employing Hi-CMOS
process technology. It offers low power standby power dissipation; therefore, it is suitable for battery backup
systems. It is packaged in standard 44-pin plastic TSOPII.

Features

• Single 3.3 V supply: 3.3 V ± 0.3 V

• Fast access time: 55 ns/70 ns (max)

• Power dissipation:

 Active: 9.9 mW (typ)
 Standby: 3.3 µW (typ)

• Completely static memory.

 No clock or timing strobe required

• Equal access and cycle times

• Common data input and output.

 Three state output

• Battery backup operation.

HM62W16258B Series

Ordering Information

Type No. Access time Package

HM62W16258BLTT-5
HM62W16258BLTT-7

HM62W16258BLTT-5SL
HM62W16258BLTT-7SL

55 ns
70 ns

55 ns
70 ns

400-mil 44-pin plastic TSOPII (normal-bend type) (TTP-44DB)

2

Pin Arrangement

HM62W16258B Series

44-pin TSOP

A4
A3
A2
A1
A0
CS
I/O0
I/O1
I/O2
I/O3
V

CC

V

SS

I/O4
I/O5
I/O6
I/O7
WE
A17
A16
A15
A14
A13

1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22

(Top view)

44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23

A5
A6
A7

OE
UB
LB

I/O15
I/O14
I/O13
I/O12
V

SS

V

CC

I/O11
I/O10
I/O9
I/O8
NC
A8
A9
A10
A11
A12

Pin Description

Pin name Function

A0 to A17 Address input
I/O0 to I/O15 Data input/output

CS Chip select
WE Write enable
OE Output enable
LB Lower byte select
UB Upper byte select

V

CC

V

SS

NC No connection

Power supply
Ground

3

HM62W16258B Series

Block Diagram

LSB

MSB

A4

A3
A15
A14
A16

A1

A2
A17

A0
A13

I/O0

I/O15

Row
decoder

Input
data
control

V

CC

V

SS

•

•

•

•

•

•

•

Memory matrix
2,048 x 2,048

Column I/O

•

•

Column decoder

CS

LB

UB

WE

OE

Control logic

LSB

A7

A6

•

•

A5

A8

A9

A10

A11

A12

MSB

4

HM62W16258B Series

Operation Table

CS WE OE UB LB I/O0 to I/O7 I/O8 to I/O15 Operation

H ××××High-Z High-Z Standby
×××H H High-Z High-Z Standby

L H L L L Dout Dout Read
L H L H L Dout High-Z Lower byte read
L H L L H High-Z Dout Upper byte read
LL×L L Din Din write
LL×H L Din High-Z Lower byte write
LL×L H High-Z Din Upper byte write
LHH××High-Z High-Z Output disable

Note: H: VIH, L: VIL, ×: VIH or V

Absolute Maximum Ratings

Parameter Symbol Value Unit

Power supply voltage relative to V
Terminal voltage on any pin relative to V
Power dissipation P
Storage temperature range Tstg –55 to +125 °C
Storage temperature range under bias Tbias –10 to +85 °C

Notes: 1. VT min: –3.0 V for pulse half-width ≤ 30 ns.

2. Maximum voltage is +4.6 V.

IL

SS

SS

V

CC

V

T

T

–0.5 to + 4.6 V
–0.5*1 to VCC + 0.3*

2

V

1.0 W

DC Operating Conditions

Parameter Symbol Min Typ Max Unit Note

Supply voltage V

Input high voltage V
Input low voltage V

CC

V

SS

IH

IL

Ambient temperature range Ta 0 — 70 °C
Note: 1. VIL min: –3.0 V for pulse half-width ≤ 30 ns.

3.0 3.3 3.6 V
000V

2.0 — VCC + 0.3 V
–0.3 — 0.8 V 1

5