HIT HM6216255HCJP-10, HM6216255HCLJP-10, HM6216255HCLTT-10, HM6216255HCTT-10 Datasheet

HM6216255HC Series
4M High Speed SRAM (256-kword × 16-bit)
ADE-203-1196 (Z)
Preliminary
Rev. 0.0
Oct. 31, 2000
The HM6216255HC Series is a 4-Mbit high speed static RAM organized 256-k word × 16-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in 400­mil 44-pin plastic SOJ and 400-mil 44-pin plastic TSOPII.
Features
Single 5.0 Vsupply : 5.0 V ± 10 %
Access time: 10 ns (max)
Completely static memoryNo clock or timing strobe required
Equal access and cycle times
Directly TTL compatibleAll inputs and outputs
Operating current: 170 mA (max)
TTL standby current: 40 mA (max)
CMOS standby current: 5 mA (max)
: 1.2 mA (max) (L-version)
Data retansion current: 0.8 mA (max) (L-version)
Data retantion voltage: 2 V (min) (L-version)
Center VCC and VSS type pinout
Preliminary: The specification of this device are subject to change without notice. Please contact your nearest Hitachi’s Sales Dept. regarding specification.
HM6216255HC Series
Ordering Information
Type No. Access time Package
HM6216255HCJP-10 10 ns 400-mil 44-pin plastic SOJ (CP-44D) HM6216255HCLJP-10 10 ns HM6216255HCTT-10 10 ns 400-mil 44-pin plastic TSOPII (TTP-44DE) HM6216255HCLTT-10 10 ns
2
Pin Arrangement
HM6216255HC Series
A0 A1 A2 A3 A4
CS
I/O1 I/O2 I/O3 I/O4
V
CC
V
SS
I/O5 I/O6 I/O7 I/O8
WE
A5 A6 A7 A8 A9
Pin Description
44-pin SOJ
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
(Top View)
44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23
A17 A16 A15
OE UB LB
I/O16 I/O15 I/O14 I/O13 V
SS
V
CC
I/O12 I/O11 I/O10 I/O9 NC A14 A13 A12 A11 A10
I/O1 I/O2 I/O3 I/O4
V
V
I/O5 I/O6 I/O7 I/O8
WE
A0 A1 A2 A3 A4
CS
CC SS
A5 A6 A7 A8 A9
44-pin TSOP
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
(Top View)
44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23
A17 A16 A15
OE UB LB
I/O16 I/O15 I/O14 I/O13 V
SS
V
CC
I/O12 I/O11 I/O10 I/O9 NC A14 A13 A12 A11 A10
Pin name Function Pin name Function
A0 to A17 Address input UB Upper byte select I/O1 to I/O16 Data input/output LB Lower byte select
CS Chip select V OE Output enable V
CC
SS
Power supply Ground
WE Write enable NC No connection
3
HM6216255HC Series
Block Diagram
(LSB)
A14 A13 A12
A5 A6
A7 A11 A10
A3
A1
(MSB)
I/O1
.
.
.
I/O8 I/O9
.
.
.
I/O16
WE CS
LB
Row
decoder
CS
Input
data
control
1024-row × 32-column ×
8-block × 16-bit
(4,194,304 bits)
Column I/O
Column decoder
A8 A9 A17 A15 A16 A0 A2 A4
(LSB)
CS
(MSB)
Internal voltage
generater
V
CC
V
SS
UB
OE
CS
4
HM6216255HC Series
Operation Table
CS OE WE LB UB Mode VCC current I/O1–I/O8 I/O9–I/O16 Ref. cycle
H ××××Standby I LHH××Output disable I L L H L L Read I L L H L H Lower byte read I L L H H L Upper byte read I L LHHH— I L × L L L Write I L × L L H Lower byte write I L × L H L Upper byte write I L × L HH— I
, I
SB
CC
CC
CC
CC
CC
CC
CC
CC
CC
Note: ×: H or L
Absolute Maximum Ratings
SB1
High-Z High-Z — High-Z High-Z — Output Output Read cycle Output High-Z Read cycle High-Z Output Read cycle High-Z High-Z — Input Input Write cycle Input High-Z Write cycle High-Z Input Write cycle High-Z High-Z
Parameter Symbol Value Unit
Supply voltage relative to V Voltage on any pin relative to V
SS
SS
Power dissipation P
V
CC
V
T
T
–0.5 to +7.0 V –0.5*1 to VCC + 0.5*
2
V
1.0 W Operating temperature Topr 0 to +70 °C Storage temperature Tstg –55 to +125 °C Storage temperature under bias Tbias –10 to +85 °C
Notes: 1. VT (min) = –2.0 V for pulse width (under shoot) 6 ns.
2. V
(max) = VCC + 2.0 V for pulse width (over shoot) 6 ns.
T
5
HM6216255HC Series
Recommended DC Operating Conditions (Ta = 0 to +70°C)
Parameter Symbol Min Typ Max Unit
3
Supply voltage V
Input voltage V
CC
VSS*
IH
V
IL
*
4
Notes: 1. VIL (min) = –2.0 V for pulse width (under shoot) 6 ns.
2. V
(max) = VCC + 2.0 V for pulse width (over shoot) 6 ns.
IH
3. The supply voltage with all V
4. The supply voltage with all V
pins must be on the same level.
CC
pins must be on the same level.
SS
DC Characteristics (Ta = 0 to +70°C, VCC = 5.0 V ± 10 %, VSS = 0 V)
4.5 5.0 5.5 V 000V
2.2 VCC + 0.5*2V
1
–0.5*
0.8 V
Parameter Symbol Min Typ*
Input leakage current |I Output leakage current*
1
Operating power supply current I
Standby power supply current I
|——2 µA Vin = VSS to V
LI
|ILO|——2 µA Vin = VSS to V
CC
SB
I
SB1
170 mA CS = VIL, Iout = 0 mA
——40mACS = VIH,
TBD 5 mA VCC CS VCC – 0.2 V,
1
Max Unit Test conditions
Other inputs = V
Other inputs = V
CC
CC
IH/VIL
IH/VIL
(1) 0 V Vin 0.2 V or
Output voltage V
(2) V
2
—*
OL
V
OH
0.4 V IOL = 8 mA
2.4 V IOH = –4 mA
TBD*21.2*
2
Vin VCC – 0.2 V
CC
Note: 1. Typical values are at VCC = 5.0 V, Ta = +25°C and not guaranteed.
2. This characteristics is guaranteed only for L-version.
Capacitance (Ta = +25°C, f = 1.0 MHz)
Parameter Symbol Min Typ Max Unit Test conditions
Input capacitance* Input/output capacitance*
1
1
Note: 1. This parameter is sampled and not 100% tested.
Cin 6 pF Vin = 0 V C
I/O
——8 pFV
= 0 V
I/O
6
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