HM6216255HC Series
4M High Speed SRAM (256-kword × 16-bit)
ADE-203-1196 (Z)
Preliminary
Rev. 0.0
Oct. 31, 2000
Description
The HM6216255HC Series is a 4-Mbit high speed static RAM organized 256-k word × 16-bit. It has realized
high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit
designing technology. It is most appropriate for the application which requires high speed, high density
memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in 400mil 44-pin plastic SOJ and 400-mil 44-pin plastic TSOPII.
Features
• Single 5.0 Vsupply : 5.0 V ± 10 %
• Access time: 10 ns (max)
• Completely static memory
No clock or timing strobe required
• Equal access and cycle times
• Directly TTL compatible
All inputs and outputs
• Operating current: 170 mA (max)
• TTL standby current: 40 mA (max)
• CMOS standby current: 5 mA (max)
: 1.2 mA (max) (L-version)
• Data retansion current: 0.8 mA (max) (L-version)
• Data retantion voltage: 2 V (min) (L-version)
• Center VCC and VSS type pinout
Preliminary: The specification of this device are subject to change without notice. Please contact your
nearest Hitachi’s Sales Dept. regarding specification.
HM6216255HC Series
Ordering Information
Type No. Access time Package
HM6216255HCJP-10 10 ns 400-mil 44-pin plastic SOJ (CP-44D)
HM6216255HCLJP-10 10 ns
HM6216255HCTT-10 10 ns 400-mil 44-pin plastic TSOPII (TTP-44DE)
HM6216255HCLTT-10 10 ns
2
Pin Arrangement
HM6216255HC Series
A0
A1
A2
A3
A4
CS
I/O1
I/O2
I/O3
I/O4
V
CC
V
SS
I/O5
I/O6
I/O7
I/O8
WE
A5
A6
A7
A8
A9
Pin Description
44-pin SOJ
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
(Top View)
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A17
A16
A15
OE
UB
LB
I/O16
I/O15
I/O14
I/O13
V
SS
V
CC
I/O12
I/O11
I/O10
I/O9
NC
A14
A13
A12
A11
A10
I/O1
I/O2
I/O3
I/O4
V
V
I/O5
I/O6
I/O7
I/O8
WE
A0
A1
A2
A3
A4
CS
CC
SS
A5
A6
A7
A8
A9
44-pin TSOP
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
(Top View)
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A17
A16
A15
OE
UB
LB
I/O16
I/O15
I/O14
I/O13
V
SS
V
CC
I/O12
I/O11
I/O10
I/O9
NC
A14
A13
A12
A11
A10
Pin name Function Pin name Function
A0 to A17 Address input UB Upper byte select
I/O1 to I/O16 Data input/output LB Lower byte select
CS Chip select V
OE Output enable V
CC
SS
Power supply
Ground
WE Write enable NC No connection
3
HM6216255HC Series
Block Diagram
(LSB)
A14
A13
A12
A5
A6
A7
A11
A10
A3
A1
(MSB)
I/O1
.
.
.
I/O8
I/O9
.
.
.
I/O16
WE
CS
LB
Row
decoder
CS
Input
data
control
1024-row × 32-column ×
8-block × 16-bit
(4,194,304 bits)
Column I/O
Column decoder
A8 A9 A17 A15 A16 A0 A2 A4
(LSB)
CS
(MSB)
Internal
voltage
generater
V
CC
V
SS
UB
OE
CS
4
HM6216255HC Series
Operation Table
CS OE WE LB UB Mode VCC current I/O1–I/O8 I/O9–I/O16 Ref. cycle
H ××××Standby I
LHH××Output disable I
L L H L L Read I
L L H L H Lower byte read I
L L H H L Upper byte read I
L LHHH— I
L × L L L Write I
L × L L H Lower byte write I
L × L H L Upper byte write I
L × L HH— I
, I
SB
CC
CC
CC
CC
CC
CC
CC
CC
CC
Note: ×: H or L
Absolute Maximum Ratings
SB1
High-Z High-Z —
High-Z High-Z —
Output Output Read cycle
Output High-Z Read cycle
High-Z Output Read cycle
High-Z High-Z —
Input Input Write cycle
Input High-Z Write cycle
High-Z Input Write cycle
High-Z High-Z —
Parameter Symbol Value Unit
Supply voltage relative to V
Voltage on any pin relative to V
SS
SS
Power dissipation P
V
CC
V
T
T
–0.5 to +7.0 V
–0.5*1 to VCC + 0.5*
2
V
1.0 W
Operating temperature Topr 0 to +70 °C
Storage temperature Tstg –55 to +125 °C
Storage temperature under bias Tbias –10 to +85 °C
Notes: 1. VT (min) = –2.0 V for pulse width (under shoot) ≤ 6 ns.
2. V
(max) = VCC + 2.0 V for pulse width (over shoot) ≤ 6 ns.
T
5
HM6216255HC Series
Recommended DC Operating Conditions (Ta = 0 to +70°C)
Parameter Symbol Min Typ Max Unit
3
Supply voltage V
Input voltage V
CC
VSS*
IH
V
IL
*
4
Notes: 1. VIL (min) = –2.0 V for pulse width (under shoot) ≤ 6 ns.
2. V
(max) = VCC + 2.0 V for pulse width (over shoot) ≤ 6 ns.
IH
3. The supply voltage with all V
4. The supply voltage with all V
pins must be on the same level.
CC
pins must be on the same level.
SS
DC Characteristics (Ta = 0 to +70°C, VCC = 5.0 V ± 10 %, VSS = 0 V)
4.5 5.0 5.5 V
000V
2.2 — VCC + 0.5*2V
1
–0.5*
— 0.8 V
Parameter Symbol Min Typ*
Input leakage current |I
Output leakage current*
1
Operating power supply current I
Standby power supply current I
|——2 µA Vin = VSS to V
LI
|ILO|——2 µA Vin = VSS to V
CC
SB
I
SB1
— — 170 mA CS = VIL, Iout = 0 mA
——40mACS = VIH,
— TBD 5 mA VCC ≥ CS ≥ VCC – 0.2 V,
1
Max Unit Test conditions
Other inputs = V
Other inputs = V
CC
CC
IH/VIL
IH/VIL
(1) 0 V ≤ Vin ≤ 0.2 V or
Output voltage V
(2) V
2
—*
OL
V
OH
— — 0.4 V IOL = 8 mA
2.4 — — V IOH = –4 mA
TBD*21.2*
2
≥ Vin ≥ VCC – 0.2 V
CC
Note: 1. Typical values are at VCC = 5.0 V, Ta = +25°C and not guaranteed.
2. This characteristics is guaranteed only for L-version.
Capacitance (Ta = +25°C, f = 1.0 MHz)
Parameter Symbol Min Typ Max Unit Test conditions
Input capacitance*
Input/output capacitance*
1
1
Note: 1. This parameter is sampled and not 100% tested.
Cin — — 6 pF Vin = 0 V
C
I/O
——8 pFV
= 0 V
I/O
6