HIT 2SK2802 Datasheet

Features

• Low on-resistance

R

= 0. 2Ω typ. (VGS = 4 V, ID = 100 mA)

DS(on)

• 2.5V gate drive devices.

• Small package (MPAK)

Outline

2SK2802

Silicon N Channel MOS FET

Low Frequency Power Switching

ADE-208-537C (Z)

4th. Edition

Jun 1998

MPAK

G

3

1

D

S

2

1. Source

2. Gate

3. Drain

2SK2802

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Channel dissipation Pch

DSS

GSS

D

D(pulse)

Note1

Note2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown

V

(BR)DSS

voltage
Gate to source breakdown

V

(BR)GSS

voltage
Zero gate voltege drain

I

DSS

current
Gate to source leak current I
Gate to source cutoff voltage V
Static drain to source on state

R

GSS

GS(off)

DS(on)

resistance
Static drain to source on state

R

DS(on)

resistance
Forward transfer admittance |yfs| 0.7 1.2 — S ID = 250 mA

Input capacitance Ciss — 14.0 — pF VDS = 10V
Output capacitance Coss — 68 — pF VGS = 0
Reverse transfer capacitance Crss — 3.0 — pF f = 1MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t

d(on)

r

d(off)

f

Note: 2. Pulse test

3. Marking is “ZV–”

30——V I

±10——V I

— — 1.0 µAV

——±10 µAV

0.5 — 1.5 V ID = 10µA, VDS = 5V
— 0.2 0.28 Ω ID = 100 mA

— 0.3 0.5 Ω ID = 40 mA

— 0.27 — µsV
— 1.5 — µsR
— 2.2 — µs
— 2.15 — µs

30 V
±10 V

0.5 A

1.0 A
150 mW

= 100µA, VGS = 0

D

= ±100µA, VDS = 0

G

= 30 V, VGS = 0

DS

= ±6.5V, VDS = 0

GS

V

= 4V

GS

V

= 2.5V

GS

V

= 10V

DS

= 4V, ID = 250 mA

GS

= 40Ω

L

Note2

Note2

Note2

2

Main Characteristics

2SK2802

200

Power vs. Temperature Derating

150

100

50

Channel Dissipation Pch (mW)

0

50 100 150 200

Ambient Temperature Ta (°C)

Typical Output Characteristics

2 V

4 V

0.5

Maximum Safe Operation Area

5
2

1

0.5

D

0.2

0.1

0.05

0.02

Operation in

0.01

0.005

0.002

0.001

this area is
limited by R

Ta = 25 °C

0.05

0.1 1

DS(on)

0.2 0.5 2 5 20

Drain Current I (A)

0.0005

Drain to Source Voltage V (V)

Typical Transfer Characteristics

0.5

PW = 10 ms

(1 shot)

DC Operation

1 ms

10

DS

50

0.4

D

0.3

0.2

Drain Current I (A)

0.1

0

246810

Drain to Source Voltage V (V)

1.8 V

Pulse Test

1.6 V

V = 1.4 V

GS

DS

0.4

25°C

75°C

D

0.3

Tc = –25°C

0.2

Drain Current I (A)

0.1

0

12345

Gate to Source Voltage V (V)

V = 10 V

DS

Pulse Test

GS

3