HIT 2SK2800 Datasheet
2SK2800
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
R
= 15 mΩ typ.
DS(on)
• High speed switching
• Low drive current
• 4V gate drive device can be driven from 5V source
Outline
ADE-208-513G (Z)
8th. Edition
Jun 1998
TO–220AB
G
D
3
1. Gate
2. Drain (Flange)
3. Source
1
2
S
2SK2800
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I
Avalanche current I
Avalanche energy E
Channel dissipation Pch
DSS
GSS
D
D(pulse)
DR
Note 3
AP
Note 3
AR
Note1
Note 2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50Ω
60 V
±20 V
40 A
160 A
40 A
40 A
137 mJ
50 W
2
2SK2800
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V
Gate to source breakdown voltage V
Gate to source leak current I
Zero gate voltege drain current I
Gate to source cutoff voltage V
Static drain to source on state R
resistance R
(BR)DSS
(BR)GSS
GSS
DSS
GS(off)
DS(on)
DS(on)
60——V I
±20——V I
——±10 µAVGS = ±16V, VDS = 0
——10µAVDS = 60 V, VGS = 0
1.5 — 2.5 V ID = 1mA, VDS = 10V
—1520mΩID = 20A, VGS = 10V
—2540mΩID = 20A, VGS = 4V
Forward transfer admittance |yfs| 2035—S ID = 20A, VDS = 10V
Input capacitance Ciss — 1500 — pF VDS = 10V
Output capacitance Coss — 720 — pF VGS = 0
Reverse transfer capacitance Crss — 200 — pF f = 1MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body–drain diode forward voltage V
Body–drain diode reverse
t
d(on)
r
d(off)
f
DF
rr
— 20 — ns ID = 20A, RL = 1.5Ω
— 180 — ns VGS = 10V
— 200 — ns
— 200 — ns
— 0.95 — V IF = 40A, VGS = 0
—70—V I
recovery time
Note: 4. Pulse test
= 10mA, VGS = 0
D
= ±100µA, VDS = 0
G
= 40A, VGS = 0
F
diF/ dt =50A/µs
Note4
Note4
Note4
3
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