HIT 2SK2796-L, 2SK2796-S Datasheet
2SK2796(L), 2SK2796(S)
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-534C (Z)
4th. Edition
Jun 1998
Features
• Low on-resistance
R
DS(on)
= 0.12Ω typ.
• 4V gate drive devices.
• High speed switching
Outline
1
2
3
4
4
1
2
3
1. Gate
2. Drain
3. Source
4. Drain
DPAK |1
D
G
S
2SK2796(L), 2SK2796(S)
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
DSS
60 V
Gate to source voltage V
GSS
±20 V
Drain current I
D
5A
Drain peak current I
D(pulse)
Note1
20 A
Body-drain diode reverse drain current I
DR
5A
Avalanche current I
AP
Note3
5A
Avalanche energy E
AR
Note3
2.14 mJ
Channel dissipation Pch
Note2
20 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
2SK2796(L), 2SK2796(S)
3
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V
(BR)DSS
60——V I
D
= 10mA, VGS = 0
Gate to source breakdown voltage V
(BR)GSS
±20——V I
G
= ±100µA, VDS = 0
Zero gate voltege drain current I
DSS
——10µAVDS = 60 V, VGS = 0
Gate to source leak current I
GSS
——±10 µAVGS = ±16V, VDS = 0
Gate to source cutoff voltage V
GS(off)
1.0 — 2.0 V ID = 1mA, VDS = 10V
Static drain to source on state
resistance
R
DS(on)
— 0.12 0.16 Ω ID = 3 A, VGS = 10V
Note4
Static drain to source on state
resistance
R
DS(on)
— 0.16 0.25 Ω ID = 3A, VGS = 4V
Note4
Forward transfer admittance |yfs| 2.5 4.0 — S ID = 3A, VDS = 10V
Note4
Input capacitance Ciss — 180 — pF VDS = 10V
Output capacitance Coss — 90 — pF VGS = 0
Reverse transfer capacitance Crss — 30 — pF f = 1MHz
Turn-on delay time t
d(on)
—9 —nsV
GS
= 10V, ID = 3A
Rise time t
r
— 25 — ns RL = 10Ω
Turn-off delay time t
d(off)
—35—ns
Fall time t
f
—55—ns
Body–drain diode forward voltage V
DF
— 1.0 — V IF = 5A, VGS = 0
Body–drain diode reverse
recovery time
t
rr
— 40 — ns IF = 5A, VGS = 0
diF/ dt =50A/µs
Note: 4. Pulse test
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