HIT 2SK2788 Datasheet
Features
• Low on-resistance
R
= 0.12Ω typ (VGS = 10 V, ID = 1 A)
DS(on)
• Low drive current
• High speed switching
• 4V gate drive devices.
Outline
2SK2788
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-538
1st. Edition
G
UPAK
1
2
3
D
4
1. Gate
2. Drain
3. Source
4. Drain
S
2SK2788
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*
DSS
GSS
D
D(pulse)
DR
1
*
2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. When using the alumina ceramic board (12.5 x 20 x 0.7 mm)
60 V
±20 V
2A
4A
2A
1W
2
2SK2788
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown
V
(BR)DSS
60——V I
voltage
Gate to source breakdown
V
(BR)GSS
±20——V I
voltage
Zero gate voltege drain current I
Gate to source leak current I
Gate to source cutoff voltage V
Static drain to source on state R
resistance R
DSS
GSS
GS(off)
DS(on)
DS(on)
——10µAVDS = 60 V, VGS = 0
——±10 µAVGS = ±16V, VDS = 0
1.0 — 2.0 V ID = 1mA, VDS = 10V
— 0.12 0.16 Ω ID = 1 A, VGS = 10V*
— 0.16 0.25 Ω ID = 1A, VGS = 4V*
Forward transfer admittance |yfs| 1.6 2.8 — S ID = 1A, VDS = 10V*
Input capacitance Ciss — 180 — pF VDS = 10V
Output capacitance Coss — 90 — pF VGS = 0
Reverse transfer capacitance Crss — 30 — pF f = 1MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward
V
d(on)
r
d(off)
f
DF
—9 —nsV
— 15 — ns RL = 30Ω
—40—ns
—35—ns
— 0.9 — V ID = 2A, VGS = 0
voltage
Body to drain diode reverse
t
rr
— 35 — ns IF = 2A, VGS = 0
recovery time
Notes: 1. Pulse test
2. Marking is “VY”
= 10mA, VGS = 0
D
= ±100µA, VDS = 0
G
= 10V, ID = 1A
GS
di
/ dt = 50A/µs
F
1
1
1
3
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