HIT 2SK2737 Datasheet
Features
• Low on-resistance
R
= 10 mΩ typ.
DS(on)
• 4V gate drive devices.
• High speed switching
Outline
2SK2737
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-533B(Z)
3rd. Edition
Jun 1998
TO–220CFM
G
D
1
2
3
S
1. Gate
2. Drain
3. Source
2SK2737
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I
Channel dissipation Pch
DSS
GSS
D
D(pulse)
DR
Note1
Note2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V
Gate to source breakdown voltage V
Gate to source leak current I
Zero gate voltege drain current I
Gate to source cutoff voltage V
Static drain to source on state
(BR)DSS
(BR)GSS
GSS
DSS
GS(off)
R
DS(on)
resistance
Static drain to source on state
R
DS(on)
resistance
Forward transfer admittance |yfs| 2030—S ID = 20A, VDS = 10V
Input capacitance Ciss — 1570 — pF VDS = 10V
Output capacitance Coss — 1100 — pF VGS = 0
Reverse transfer capacitance Crss — 410 — pF f = 1MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body–drain diode forward voltage V
Body–drain diode reverse
t
d(on)
r
d(off)
f
DF
rr
recovery time
Note: 3. Pulse test
30——V I
±20——V I
——±10 µAVGS = ±16V, VDS = 0
——10µAVDS = 30 V, VGS = 0
1.0 — 2.0 V ID = 1mA, VDS = 10V
—1014mΩID = 20A, VGS = 10V
—1525mΩID = 20A, VGS = 4V
— 32 — ns VGS = 10V, ID = 20A
— 300 — ns RL = 0.5Ω
— 180 — ns
— 200 — ns
— 1.0 — V IF = 45A, VGS = 0
— 75 — ns IF = 45A, VGS = 0
30 V
±20 V
45 A
180 A
45 A
30 W
= 10mA, VGS = 0
D
= ±100µA, VDS = 0
G
diF/ dt = 50A/µs
Note3
Note3
Note3
Note3
2
Main Characteristics
2SK2737
Power vs. Temperature Derating
40
30
20
10
Channel Dissipation Pch (W)
0
50 100 150 200
Case Temperature Tc (°C)
Typical Output Characteristics
10 V
8 V
100
6 V
80
D
5 V
60
Pulse Test
4.5 V
4 V
500
Maximum Safe Operation Area
200
100
D
50
20
DC Operation (Tc = 25°C)
10
Operation in
5
2
1
0.5
this area is
limited by R
Ta = 25 °C
Drain Current I (A)
0.1 0.3 1
Drain to Source Voltage V (V)
Typical Transfer Characteristics
100
Tc = –25°C
80
D
60
10 µs
100 µs
PW = 10 ms (1shot)
DS(on)
1 ms
3
10
DS
25°C
75°C
30
100
40
Drain Current I (A)
20
0
246810
Drain to Source Voltage V (V)
3.5 V
3 V
V = 2.5 V
GS
DS
40
Drain Current I (A)
20
0
246810
Gate to Source Voltage V (V)
V = 10 V
DS
Pulse Test
GS
3
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