HIT 2SK2736 Datasheet
Features
• Low on-resistance
R
= 20 mΩ typ. (VGS = 10V, ID = 15 A)
DS(on)
• 4V gate drive devices.
• High speed switching
Outline
2SK2736
Silicon N Channel DV–L MOS FET
High Speed Power Switching
ADE-208-544
1st. Edition
TO–220CFM
G
D
1
2
3
S
1. Gate
2. Drain
3. Source
2SK2736
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*
DSS
GSS
D
D(pulse)
DR
1
*
2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
30 V
±20 V
30 A
120 A
30 A
25 W
2
2SK2736
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown
V
(BR)DSS
30——V I
voltage
Gate to source breakdown
V
(BR)GSS
±20——V I
voltage
Zero gate voltege drain
I
DSS
——10µAV
current
Gate to source leak current I
Gate to source cutoff voltage V
Static drain to source on state R
resistance R
GSS
GS(off)
DS(on)
DS(on)
——±10 µAV
1.0 — 2.0 V ID = 1mA, VDS = 10V
—2028mΩI
—3550mΩI
Forward transfer admittance |yfs|1218—SI
Input capacitance Ciss — 750 — pF VDS = 10V
Output capacitance Coss — 520 — pF VGS = 0
Reverse transfer capacitance Crss — 210 — pF f = 1MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward
V
d(on)
r
d(off)
f
DF
— 16 — ns VGS = 10V, ID = 15A
— 260 — ns RL = 0.67Ω
—85—ns
—90—ns
— 1.0 — V IF = 30A, VGS = 0
voltage
Body to drain diode reverse
t
rr
— 45 — ns IF = 30A, VGS = 0
recovery time
Note: 1. Pulse test
= 10mA, VGS = 0
D
= ±100µA, VDS = 0
G
= 30 V, VGS = 0
DS
= ±16V, VDS = 0
GS
= 15A, VGS = 10V*
D
= 15A, VGS = 4V*
D
= 15A, VDS = 10V*
D
diF/ dt = 50A/µs
1
1
1
See characteristics curves of 2SK2684
3
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