HIT 2SK2735-S, 2SK2735-L Datasheet
2SK2735(L), 2SK2735(S)
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-543
1st. Edition
Features
• Low on-resistance
RDS = 20 mΩ typ.
• High speed switching
• 4V gate drive device can be driven from 5V source
Outline
1
2
3
4
4
1
2
3
1. Gate
2. Drain
3. Source
4. Drain
DPAK–2
D
G
S
2SK2735(L), 2SK2735(S)
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
DSS
30 V
Gate to source voltage V
GSS
±20 V
Drain current I
D
20 A
Drain peak current I
D(pulse)
*
1
80 A
Body to drain diode reverse drain current I
DR
20 A
Channel dissipation Pch*
2
20 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
2SK2735(L), 2SK2735(S)
3
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
30——V I
D
= 10mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20——V I
G
= ±100µA, VDS = 0
Gate to source leak current I
GSS
——±10 µAV
GS
= ±16V, VDS = 0
Zero gate voltege drain
current
I
DSS
——10µAV
DS
= 30 V, VGS = 0
Gate to source cutoff voltage V
GS(off)
1.0 — 2.0 V ID = 1mA, VDS = 10V
Static drain to source on state R
DS(on)
—2028mΩI
D
= 10A, VGS = 10V*
1
resistance R
DS(on)
—3550mΩI
D
= 10A, VGS = 4V*
1
Forward transfer admittance |yfs| 8 16 — S ID = 10A, VDS = 10V*
1
Input capacitance Ciss — 750 — pF VDS = 10V
Output capacitance Coss — 520 — pF VGS = 0
Reverse transfer capacitance Crss — 210 — pF f = 1MHz
Turn-on delay time t
d(on)
— 16 — ns ID = 10A, VGS = 10V
Rise time t
r
— 225 — ns RL = 1Ω
Turn-off delay time t
d(off)
—85—ns
Fall time t
f
—90—ns
Body to drain diode forward
voltage
V
DF
— 1.0 — V IF = 20A, VGS = 0
diF/ dt = 50A/µs
Body to drain diode reverse
recovery time
t
rr
—40—V I
F
= 20A, VGS = 0
diF/ dt = 50A/µs
Note: 1. Pulse test
See characteristics curves of 2SK2684
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