HIT 2SK2734 Datasheet

Features

• Low on-resistance

R

= 0.04Ω typ (at VGS = 10 V, ID = 2.5 A)

DS(on)

• 4V gate drive devices.

• Large current capacitance

ID = 5 A

Outline

2SK2734

Silicon N Channel MOS FET
High Speed Power Switching

ADE-208-520

1st. Edition

TO-92MOD.

G

D

3

2

1

S

1. Source

2. Drain

3. Gate

2SK2734

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I

DSS

GSS

D

D(pulse)

DR

1

*

Channel dissipation Pch 0.9 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown

V

(BR)DSS

voltage
Gate to source breakdown

V

(BR)GSS

voltage
Zero gate voltege drain current I
Gate to source leak current I
Gate to source cutoff voltage V
Static drain to source on state R
resistance R

DSS

GSS

GS(off)

DS(on)

DS(on)

Forward transfer admittance |yfs| 47—SI
Input capacitance Ciss — 550 — pF VDS = 10V
Output capacitance Coss — 380 — pF VGS = 0
Reverse transfer capacitance Crss — 155 — pF f = 1MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward

V

d(on)

r

d(off)

f

DF

voltage
Body to drain diode reverse

t

rr

recovery time
Note: 1. Pulse test

30——V I

±20——V I

——10µAVDS = 30 V, VGS = 0
——±10 µAVGS = ±16V, VDS = 0

1.0 — 2.0 V ID = 1mA, VDS = 10V
— 0.04 0.055 Ω ID = 2.5A, VGS = 10V*
— 0.055 0.08 Ω ID = 2.5A, VGS = 4V*

— 14 — ns VGS = 10V, ID = 2.5A
— 80 — ns RL = 4Ω
—80—ns
—65—ns
— 1.0 — V IF = 5A, VGS = 0

— 40 — ns IF = 5A, VGS = 0

30 V
±20 V
5A
20 A
5A

= 10mA, VGS = 0

D

= ±100µA, VDS = 0

G

= 2.5A, VDS = 10V*

D

di

/ dt = 50A/µs

F

1

1

1

2

Main Characteristics

2SK2734

Power vs. Temperature Derating

1.6

1.2

0.8

0.4

Channel Dissipation Pch (W)

0

50 100 150 200

Ambient Temperature Ta (°C)

Typical Output Characteristics

10

4 V

3.5 V

5 V

10 V

8

Pulse Test

100

Maximum Safe Operation Area

30
10

D

10 µs

3
1

Operation in

0.3

0.1

this area is
limited by R

Drain Current I (A)

DC Operation

DS(on)

0.03
Ta = 25°C

0.01

0.1 0.3 1
Drain to Source Voltage V (V)

Typical Transfer Characteristics

5

V = 10 V

DS

Pulse Test

4

100 µs

1 ms

PW = 10 ms

(1 shot)

3

10

DS

30

100

D

6

4

Drain Current I (A)

2

0

246810

Drain to Source Voltage V (V)

3 V

V = 2.5 V

GS

DS

D

3

2

Drain Current I (A)

1

0

Tc = 75°C

12345

Gate to Source Voltage V (V)

25°C

–25°C

GS

3