HIT 2SC5050 Datasheet
2SC5050
Silicon NPN Epitaxial
Application
VHF / UHF wide band amplifier
Features
• High gain bandwidth product
fT = 11 GHz Typ
• High gain, low noise figure
PG = 14.0 dB Typ, NF = 1.1 dB Typ at f = 900 MHz
Outline
MPAK
3
1
2
1. Emitter
2. Base
3. Collector
2SC5050
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P
CBO
CEO
EBO
C
C
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
V
(BR)CBO
voltage
Collector cutoff current I
Emitter cutoff current I
DC current transfer ratio h
CBO
I
CEO
EBO
FE
Collector output capacitance Cob — 0.6 1.1 pF VCB = 5 V, IE = 0, f = 1 MHz
Gain bandwidth product f
T
S21 Parameter |S21| — 13.5 — dB VCE = 5 V, IC = 20 mA,
Power gain PG 11.0 14.0 — dB VCE = 5 V, IC = 20 mA,
Noise figure NF — 1.1 2.0 dB VCE = 5 V, IC = 5 mA,
Note: Marking is “YZ–”.
15——V I
——10µAVCB = 12 V, IE = 0
——1 mAV
——10µAVEB = 1.5 V, IC = 0
50 120 250 VCE = 5 V, IC = 20 mA
8.0 11.0 — GHz VCE = 5 V, IC = 20 mA
15 V
8V
1.5 V
50 mA
150 mW
= 10 µA, IE = 0
C
= 8 V, RBE = ∞
CE
f = 1000 MHz
f = 900 MHz
f = 900 MHz
Attention: This device is very sensitive to electro static discharge.
It is recommended to adopt appropriate cautions when handling this transistor.
See characteristic curves of 2SC4926.
2
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