HIT 2SC4994 Datasheet
2SC4994
Silicon NPN Epitaxial
Application
VHF / UHF wide band amplifier
Features
• High gain bandwidth product
fT = 10.5 GHz Typ
• High gain, low noise figure
PG = 17.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz
ADE-208-012
1st. Edition
Outline
CMPAK–4
2
3
1
4
1. Collector
2. Emitter
3. Base
4. Emitter
2SC4994
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P
CBO
CEO
EBO
C
C
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector cutoff current I
Emitter cutoff current I
DC current transfer ratio h
CBO
I
CEO
EBO
FE
Collector output capacitance Cob — 0.4 0.75 pF VCB = 5 V, IE = 0, f = 1 MHz
Gain bandwidth product f
T
Power gain PG 14.0 17.0 — dB VCE = 5 V, IC = 10 mA,
Noise figure NF — 1.2 2.5 dB VCE = 5 V, IC = 5 mA,
Note: Marking is “YS–”.
——10µAVCB = 15 V, IE = 0
——1 mAV
——10µAVEB = 1.5 V, IC = 0
50 120 250 VCE = 5 V, IC = 10 mA
7.5 10.5 — GHz VCE = 5 V, IC = 10 mA
15 V
8V
1.5 V
20 mA
100 mW
= 8 V, RBE = ∞
CE
f = 900 MHz
f = 900 MHz
Attention: This device is very sensitive to electro static discharge.
It is recommended to adopt appropriate cautions when handling this transistor.
2
Maximum Collector Dissipation Curve
120
2SC4994
DC Current Transfer Ratio vs.
Collector Current
200
(mW)
100
C
80
60
40
20
Collector Power Dissipation P
0 50 100 150
Ambient Temperature Ta (°C)
Gain Bandwidth Product vs.
Collector Current
12
V = 5 V
10
T
8
6
V = 1 V
CE
4
CE
FE
160
V = 5V
CE
120
80
V = 1V
CE
40
DC Current Transfer Ratio h
0
0.1
0.2 0.5 1 2 5 10 20 50
Collector Current I (mA)
Collector Output Capacitance vs.
Collector to Base Voltage
0.52
0.48
0.44
0.40
C
I = 0
E
f = 1 MHz
2
Gain Bandwidth Product f (GHz)
0
12 51020 50
Collector Current I (mA)
C
0.36
0.32
Collector Output Capacitance Cob (pF)
0.5
12 51020
Collector to Base Voltage V (V)
CB
3
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