HIT 2SA1025, 2SA1082, 2SA1081 Datasheet
2SA1025, 2SA1081, 2SA1082
Silicon PNP Epitaxial
Application
• Low frequency amplifier
• Complementary pair with 2SC2396, 2SC2543 and 2SC2544
Outline
TO-92 (1)
1. Emitter
2. Collector
3. Base
3
2
1
2SA1025, 2SA1081, 2SA1082
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol 2SA1025 2SA1081 2SA1082 Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Emitter current I
Collector power dissipation P
CBO
CEO
EBO
C
E
C
Junction temperature Tj 150 150 150 °C
Storage temperature Tstg –55 to +150 –55 to +150 –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
2SA1025 2SA1081 2SA1082
Item Symbol Min Typ Max Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
Collector to emitter
breakdown voltage
Emitter to base
breakdown voltage
Collector cutoff current I
Emitter cutoff current I
DC current transfer ratio hFE*
Collector to emitter
saturation voltage
Base to emitter voltage V
Gain bandwidth product f
Collector output
capacitance
Note: 1. The 2SA1025, 2SA1081 and 2SA1082 are grouped by hFE as follows.
DE
250 to 500 400 to 800
V
V
V
CBO
EBO
V
T
–60 — — –90 — — –120 — — V IC = –10 µA, IE = 0
(BR)CBO
–60 — — –90 — — –120 — — V IC = –1 mA,
(BR)CEO
–5 — — –5 — — –5 — — µAIE = –10 µA, IC = 0
(BR)EBO
— — –0.1 — — –0.1 — — –0.1 µAVCB = –50 V, IE = 0
— — –0.1 — — –0.1 — — –0.1 VEB = –2 V, IC = 0
1
250 — 800 250 — 800 250 — 800 VCE = –12 V,
— — –0.2 — — –0.2 — — –0.2 V IC = –10 mA,
CE(sat)
— –0.6 — — –0.6 — — –0.6 — V VCE = –12 V,
BE
—90— —90— —90— MHzVCE = –12 V,
Cob — 3.5 — — 3.5 — — 3.5 — pF VCB = –10 V, IE = 0,
–60 –90 –120 V
–60 –90 –120 V
–5 –5 –5 V
–100 –100 –100 mA
100 100 100 mA
400 400 400 mW
RBE = ∞
IC = –2 mA
IB = –1 mA
IC = –2 mA
IC = –2 mA
f = 1 MHz
See characteristic curves of 2SA1083.
2
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