HIT 1SS82 Datasheet
1SS82
Silicon Epitaxial Planar Diode for High Voltage Switching
ADE-208-149A (Z)
Features
• High reverse voltage. (VR = 200V)
• High reliability with glass seal.
Ordering Information
Type No. Cathode band 2nd band Package Code
1SS82 Verdure Light Blue DO-35
Rev. 1
Jul. 1995
Outline
1
2nd band
Cathode band
1. Cathode
2. Anode
2
1SS82
Absolute Maximum Ratings*2 (Ta = 25°C)
Item Symbol Value Unit
1
FM
FSM
O
*
RM
R
2
*
Peak reverse voltage V
Reverse voltage V
Peak forward current I
Non-Repetitive peak forward surge current I
Average forward current I
Power dissipation Pd 400 mW
Junction temperature Tj 175 °C
Storage temperature Tstg –65 to +175 °C
Notes: 1. Reverse voltage in excess of peak reverse voltage may deteriorate electrical characteristic.
2. Within 1s forward surge current.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition
Forward voltage V
Reverse current I
F
R1
I
R2
Capacitance C — 1.5 — pF VR = 0V, f = 1MHz
Reverse recovery time t
rr
— — 1.0 V IF = 100mA
— — 0.2 µAVR = 200V
— — 100 VR = 250V
— — 100 ns IF = IR = 30mA, Irr = 3mA, RL = 100Ω
250 V
200 V
625 mA
1A
200 mA
2
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