HIT 1SS286 Datasheet
1SS286
Silicon Schottky Barrier Diode for Various Detector,
High Speed Switching
ADE-208-302A (Z)
Features
• Very low reverse current.
• Detection efficiency is very good.
• Small glass package (MHD) enables easy moun ting and high reliability.
Ordering Information
Type No. Cathode band Mark Package Code
1SS286 Green 7 MHD
Rev. 1
Sep. 1995
Outline
7
1
Cathode band
2
1. Cathode
2. Anode
1SS286
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Value Unit
Reverse voltage V
Forward current I
R
F
Power dissipation Pd 150 mW
Junction temperature Tj 100 °C
Storage temperature Tstg –55 to +100 °C
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition
Forward voltage V
Reverse voltage V
Reverse current I
F
R
R
Capacitance C — — 1.2 pF VR = 0V, f = 1MHz
Capacitance deviation ∆C——0.1pFV
Forward voltage
∆V
F
deviation
ESD-Capability — 10 — — V *1C = 200pF, Both forward and
Notes: 1. Failure criterion; IR ≥ 20µA
2. Each group shall unify a multiple of 4 diodes
——0.6V I
25 — — V IR = 10µA
— — 10 nA VR= 10V
——10mVI
25 V
35 mA
= 10mA
F
= 0V, f = 1MHz
R
= 10mA
F
reverse direction 1 pulse.
Rev.1, Sep. 1995, page 2 of 6
Loading...