HIT 1SS120 Datasheet

1SS120

Silicon Epitaxial Planar Diode for High Speed Switching

ADE-208-167B (Z)

Features

• Low capacitance. (C = 3.0pF max)

• Short reverse recovery time. (trr = 3.5ns max)

• Small glass package (MHD) enables easy mounting and high reliability.

Ordering Information

Type No. Cathode band Mark Package Code

1SS120 Light Blue 1 MHD

Rev. 2

Aug. 1995

Outline

1

1

Cathode band

2

1. Cathode

2. Anode

1SS120

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Value Unit

Peak reverse voltage V
Reverse voltage V
Peak forward current I
Non-Repetitive peak forward surge current I
Average forward current I

RM

R

FM

*1 A

FSM

O

Power dissipation Pd 250 mW
Junction temperature Tj 175 °C
Storage temperature Tstg –65 to +175 °C

Note: Within 1s forward surge current.

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Condition

Forward voltage V
Reverse current I

F

R

Capacitance C — — 3.0 pF VR = 1V, f = 1MHz
Reverse recovery time trr* — — 3.5 ns IF = 10mA, VR = 6V, RL = 50Ω

Note: Reverse recovery time test circuit

Ro = 50Ω

— — 0.8 V IF = 10mA
— — 0.1 µAVR = 60V

DC
Supply

Pulse
Generator

0.1µF

3kΩ

Trigger

70 V
60 V
450 mA

150 mA

Sampling
Oscilloscope

Rin = 50Ω

2