HIT 1SS106 Datasheet

1SS106

Silicon Schottky Barrier Diode for Various Detector,

High Speed Switching

ADE-208-153A (Z)

Oct. 1998

Features

• Detection efficiency is very good.

• Small temperature coefficient.

• High reliability with glass seal.

Ordering Information

Type No. Cathode 2nd band Mark Package Code

1SS106 White White H DO-35

Rev. 1

Outline

1

H

2nd band

Cathode band

1. Cathode

2. Anode

2

1SS106

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Value Unit

Reverse voltage V
Average rectified current I

R

O

Junction temperature Tj 125 °C
Storage temperature Tstg –55 to +125 °C

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Condition

Forward current I
Reverse current I

F

R

Capacitance C — — 1.5 pF VR = 1V, f = 1MHz
Rectifier efficiency η 70 — — % Vin = 2Vrms, f = 40MHz, RL = 5kΩ,

ESD-Capability

*1

— 100 — — V C = 200pF, Both forward and

Notes: 1. Failure criterion; IR ≥ 140µA at VR = 6V

4.5 — — mA VF = 1V
——70µAVR = 6V

10 V
30 mA

C

= 20pF

L

reverse direction 1 pulse.

2