HIT 1S2076A Datasheet
1S2076A
Silicon Epitaxial Planar Diode for Various Detector,
Modulator, Demodulator
Features
• Low capacitance. (C = 3.0pF max)
• Short reverse recovery time. (trr = 8.0ns max)
• High reliability with glass seal.
Ordering Information
Type No. Cathode band Package Code
1S2076A Navy Blue DO-35
ADE-208-146A (Z)
Rev. 1
Aug. 1995
Outline
1
Cathode band
1. Cathode
2. Anode
2
1S2076A
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit
Peak reverse voltage V
Reverse voltage V
Peak forward current I
Non-Repetitive peak forward surge current I
Average forward current I
RM
R
FM
*1 A
FSM
O
Power dissipation Pd 250 mW
Junction temperature Tj 175 °C
Storage temperature Tstg –65 to +175 °C
Note: Within 1s forward surge current.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition
Forward voltage V
Reverse current I
F
R
Capacitance C — — 3.0 pF VR = 1V, f = 1MHz
Reverse recovery time trr* — — 8.0 ns IF = IR = 10mA, Irr = 1mA
Note: Reverse recovery time test circuit
Ro = 50Ω
0.64 — 0.80 V IF = 10mA
— — 0.1 µAVR = 30V
DC
Supply
Pulse
Generator
0.1µF
3kΩ
Trigger
70 V
60 V
450 mA
150 mA
Sampling
Oscilloscope
Rin = 50Ω
2
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