1S2076
Silicon Epitaxial Planar Diode for Various Detector,
Modulator, Demodulator
Features
• Low capacitance. (C = 3.0pF max)
• Short reverse recovery time. (trr = 8.0ns max)
• High reliability with glass seal.
Ordering Information
Type No. Cathode band Package Code
1S2076 Light Blue DO-35
ADE-208-145A (Z)
Rev. 1
Aug. 1995
Outline
1
Cathode band
1. Cathode
2. Anode
2
1S2076
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit
Peak reverse voltage V
Reverse voltage V
Peak forward current I
Non-Repetitive peak forward surge current I
Average forward current I
RM
R
FM
*1 A
FSM
O
Power dissipation Pd 250 mW
Junction temperature Tj 175 °C
Storage temperature Tstg –65 to +175 °C
Note: Within 1s forward surge current.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition
Forward voltage V
Reverse current I
F
R
Capacitance C — — 3.0 pF VR = 1V, f = 1MHz
Reverse recovery time trr* — — 8.0 ns IF = IR = 10mA, Irr = 1mA
Note: Reverse recovery time test circuit
Ro = 50Ω
0.64 — 0.80 V IF = 10mA
— — 0.1 µAVR = 30V
DC
Supply
Pulse
Generator
0.1µF
3kΩ
Trigger
35 V
30 V
450 mA
150 mA
Sampling
Oscilloscope
Rin = 50Ω
2
–1
10
–2
10
F
Ta = 125°C
Ta = 25°C
Ta = 75°C
Ta = –25°C
–3
10
Forward current I (A)
–4
10
0 0.2 0.8
Forward voltage V (V)
0.6
1.00.4
F
Fig.1 Forward current Vs. Forward voltage
1S2076
1.2
–4
10
Ta = 125°C
–5
10
R
–6
10
–7
10
Reverse current I (A)
–8
10
–9
10
010
Ta = 75°C
Ta = 25°C
30
Reverse voltage V (V)
R
4020
Fig.2 Reverse current Vs. Reverse voltage
50
3
1S2076
f = 1MHz
10
1.0
Capacitance C (pF)
–1
10
1.0 10
Reverse voltage V (V)
R
Fig.3 Capacitance Vs. Reverse voltage
10
2
4
Package Dimensions
1S2076
Unit: mm
26.0 Min 4.2 Max
12
0.5
φ
Cathode band (Light Blue)
26.0 Min
2.0
Max
φ
HITACHI Code
JEDEC Code
EIAJ Code
Weight (g)
12Cathode
Anode
DO-35
DO-35
SC-48
0.13
5
Cautions
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copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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