HIT 1S2075(K) Datasheet

1S2075(K)

Silicon Epitaxial Planar Diode for High Speed Switching

ADE-208-144A (Z)

Rev. 1

Aug. 1995

Features

•Low capacitance. (C = 3.5pF max)

•Short reverse recovery time. (trr = 8.0ns max)

•High reliability with glass seal.

Ordering Information

Type No.	Cathode band	Mark	Package Code
1S2075(K)	Green	H	DO-35

Outline

1	H
	2

Cathode band

1. Cathode

2. Anode

1S2075(K)

Absolute Maximum Ratings (Ta = 25°C)

Item	Symbol	Value	Unit
Peak reverse voltage	VRM	35	V
Reverse voltage	VR	30	V
Peak forward current	IFM	450	mA
Non-Repetitive peak forward surge current	IFSM*	600	mA
Average forward current	IO	100	mA
Power dissipation	Pd	250	mW
Junction temperature	Tj	175	°C
Storage temperature	Tstg	–65 to +175	°C
Note: Within 1s forward surge current.

Electrical Characteristics (Ta = 25°C)

Item	Symbol	Min	Typ	Max	Unit		Test Condition
Forward voltage	VF	—	—	0.8	V	I	F = 10mA
Reverse current	IR	—	—	0.1	A		VR = 30V
Capacitance	C	—	—	3.5	pF	V	R = 1V, f = 1MHz
Reverse recovery time	trr*	—	—	8.0	ns	I	F = IR = 10mA, Irr = 1mA

Note: Reverse recovery time test circuit

DC		3kΩ
Supply	0.1 F
Ro = 50Ω Pulse
Generator

Sampling	Rin = 50Ω
Oscilloscope

Trigger

2