1S2075(K)
Silicon Epitaxial Planar Diode for High Speed Switching
ADE-208-144A (Z)
Rev. 1
Aug. 1995
Features
• Low capacitance. (C = 3.5pF max)
• Short reverse recovery time. (trr = 8.0ns max)
• High reliability with glass seal.
Ordering Information
Type No. Cathode band Mark Package Code
1S2075(K) Green H DO-35
Outline
1. Cathode
2. Anode
Cathode band
1
2
H
1S2075(K)
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit
Peak reverse voltage V
RM
35 V
Reverse voltage V
R
30 V
Peak forward current I
FM
450 mA
Non-Repetitive peak forward surge current I
FSM
* 600 mA
Average forward current I
O
100 mA
Power dissipation Pd 250 mW
Junction temperature Tj 175 °C
Storage temperature Tstg –65 to +175 °C
Note: Within 1s forward surge current.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition
Forward voltage V
F
— — 0.8 V IF = 10mA
Reverse current I
R
— — 0.1 µAV
R
= 30V
Capacitance C — — 3.5 pF VR = 1V, f = 1MHz
Reverse recovery time trr* — — 8.0 ns IF = IR = 10mA, Irr = 1mA
Note: Reverse recovery time test circuit
3kΩ
0.1µF
Ro = 50Ω
Rin = 50Ω
DC
Supply
Pulse
Generator
Sampling
Oscilloscope
Trigger
1S2075(K)
3
Forward voltage V (V)
F
0 0.2 0.8
10
10
–4
10
–3
Forward current I (A)
F
–2
0.6
1.00.4
10
–1
1.2
Ta = –25°C
Ta = 25°C
Ta = 125°C
Ta = 75°C
Fig.1 Forward current Vs. Forward voltage
Reverse voltage V (V)
R
010
10
10
–9
10
–7
Reverse current I (A)
R
–6
30
4020
10
–5
10
–4
50
10
–8
Ta = 75°C
Ta = 125°C
Ta = 25°C
Fig.2 Reverse current Vs. Reverse voltage
1S2075(K)
4
Reverse voltage V (V)
R
1.0 10
2
10
1.0
10
Capacitance C (pF)
–1
10
f = 1MHz
Fig.3 Capacitance Vs. Reverse voltage
1S2075(K)
5
Package Dimensions
26.0 Min 4.2 Max
26.0 Min
0.5
2.0
Max
φ
φ
Cathode band (Green)
12
H
HITACHI Code
JEDEC Code
EIAJ Code
Weight (g)
DO-35
DO-35
SC-48
0.13
12Cathode
Anode
Unit: mm
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contact Hitachi’s sales office before using the product in an application that demands especially high
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for maximum rating, operating supply voltage range, heat radiation characteristics, installation
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failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
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