1S2075(K)
Silicon Epitaxial Planar Diode for High Speed Switching
ADE-208-144A (Z)
Rev. 1
Aug. 1995
Features
•Low capacitance. (C = 3.5pF max)
•Short reverse recovery time. (trr = 8.0ns max)
•High reliability with glass seal.
Ordering Information
Type No. |
Cathode band |
Mark |
Package Code |
|
|
|
|
1S2075(K) |
Green |
H |
DO-35 |
|
|
|
|
Outline
1 |
H |
2 |
Cathode band
1. Cathode
2. Anode
1S2075(K)
Absolute Maximum Ratings (Ta = 25°C)
Item |
Symbol |
Value |
Unit |
Peak reverse voltage |
VRM |
35 |
V |
Reverse voltage |
VR |
30 |
V |
|
|
|
|
Peak forward current |
IFM |
450 |
mA |
Non-Repetitive peak forward surge current |
IFSM* |
600 |
mA |
Average forward current |
IO |
100 |
mA |
|
|
|
|
Power dissipation |
Pd |
250 |
mW |
|
|
|
|
Junction temperature |
Tj |
175 |
°C |
Storage temperature |
Tstg |
–65 to +175 |
°C |
Note: Within 1s forward surge current. |
|
|
|
Electrical Characteristics (Ta = 25°C)
Item |
Symbol |
Min |
Typ |
Max |
Unit |
|
Test Condition |
Forward voltage |
VF |
— |
— |
0.8 |
V |
I |
F = 10mA |
|
|
|
|
|
|
|
|
Reverse current |
IR |
— |
— |
0.1 |
A |
|
VR = 30V |
Capacitance |
C |
— |
— |
3.5 |
pF |
V |
R = 1V, f = 1MHz |
|
|
|
|
|
|
|
|
Reverse recovery time |
trr* |
— |
— |
8.0 |
ns |
I |
F = IR = 10mA, Irr = 1mA |
|
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|
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|
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Note: Reverse recovery time test circuit
DC |
|
3kΩ |
Supply |
0.1 F |
|
Ro = 50Ω Pulse |
|
|
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|
|
Generator |
|
|
Sampling |
Rin = 50Ω |
Oscilloscope |
Trigger
2