Hewlett-Packard AT-41586 Schematic [ru]

Low Cost General Purpose
Transistors

Technical Data

AT-41586

Features

• Low Noise Figure

1.4 dB Typical at 1 GHz

1.7 dB Typical at 2 GHz

• High Associated Gain

17.0 dB Typical at 1 GHz

12.5 dB Typical at 2 GHz

• Low Cost Surface Mount
Package

• Tape and Reel Option
Available

24

21

18

15

12

A

G (dB)

9

6

3
0

0.5

Figure 1. AT-41586 Noise Figure and
Associated Gain vs. Frequency at
VCE = 8 V, IC= 10 mA.

G

A

NF

O

FREQUENCY (GHz)

4.01.0

3.02.0

Description

Hewlett-Packard’s AT-41586 is a
general purpose NPN bipolar
transistor that offers excellent
high frequency performance. The
AT-41586 is housed in a low cost
surface mount .085" diameter
plastic package. The 4 micron
emitter-to-emitter pitch enables
this transistor to be used in many
different functions. The 14 emitter
finger interdigitated geometry
yields an intermediate sized
transistor with impedances that
are easy to match for low noise
and moderate power applications.
Applications include use in
wireless systems as an LNA, gain
stage, buffer, oscillator, and
mixer. An optimum noise match
near 50 Ω in the 1 to 2 GHz
frequency range, makes this

4

device easy to use as a low noise
amplifier.

O

2

NF (dB)

0

The AT-41586 bipolar transistor is
fabricated using Hewlett-Packard’s
10 GHz fT Self-Aligned-Transistor
(SAT) process. The die is nitride
passivated for surface protection.

86 Plastic Package

Pin Connections

EMITTER

4

BASE

1

415

2

EMITTER

Excellent device uniformity,
performance and reliability are
produced by the use of ion­implantation, self-alignment
techniques, and gold metalization
in the fabrication of this device.

COLLECTOR

3

2

AT-41586 Absolute Maximum Ratings

Symbol Parameter Units Maximum

V
V
V

T

EBO
CBO
CEO

I

C

P

T

T

STG

j

Emitter-Base Voltage V 1.5
Collector-Base Voltage V 20
Collector-Emitter Voltage V 12
Collector Current mA 60
Power Dissipation

[2]

Junction Temperature °C 150
Storage Temperature °C -65 to 150

[1]

Absolute

mW 500

[1]

Thermal Resistance:

θ

=165°C/W

jc

[3]

Notes:

1. Operation of this device above any one of these parameters may cause permanent damage.

2. T

= 25°C.

CASE

3. See MEASUREMENTS section, “Thermal Resistance,” for more information.

Electrical Specifications, TA = 25°C, V

CE

= 8 V

Symbol Parameters and Test Conditions Unit Min. Typ. Max.

NF

Optimum Noise Figure: IC = 10 mA f = 1.0 GHz dB 1.4

o

f = 2.0 GHz 1.7
f = 4.0 GHz 3.0

G

Gain @ NF0: IC = 10 mA f = 1.0 GHz dB 17.0

A

f = 2.0 GHz 12.5
f = 4.0 GHz 8.0

2

|S

|

21E

Insertion Power Gain: IC = 25 mA f = 1.0 GHz dB 17.0

f = 2.0 GHz 11.0

P

1dB

G

1dB

f

T

h

FE

I

CBO

I

EBO

Note:

1. For more information on outlines 86, refer to “Tape and Reel Packaging for Surface Mount Devices.”

Power Output @ 1 dB Gain Compression: IC = 25 mA f = 2.0 GHz dBm 18.0
1 dB Compressed Gain: IC = 25 mA f = 2.0 GHz dB 13.0
Gain Bandwidth Product: IC = 25 mA GHz 8.0
Forward Current Transfer Ratio: IC = 10 mA 30 150 270
Collector Cutoff Current: VCB = 8 V µA 0.2
Emitter Cutoff Current: VEB = 1 V µA 1.0

16

14

A

G (dB)

12

10

030

G

A

NF

O

10 20

I (mA)

C

4

2

O

NF (dB)

0

Figure 2. AT-41586 Optimum Noise
Figure and Associated Gain vs. Collec­tor Current at VCE = 8 V, f = 2.0 GHz.

20
18

P

1dB

16
14

G

1dB

12
10

GAIN (dB)

8
6
4

2
0

10 20

COLLECTOR CURRENT

Figure 3. AT-41586 P
Collector Current at VCE = 8 V,

1dB

30

and G

f = 2.0 GHz.

1dB

vs.

20

1.0 GHz

15

I (mA)

C

2.0 GHz

4.0 GHz

30

2

10

21E

|S | (dB)

5

0

02540

40

510

Figure 4. AT-41586 Insertion Power
Gain vs. Collector Current and
Frequency at 25°C, VCE = 8 V.

3

GAIN (dB)

AT-41586 Typical Scattering Parameters at TA = 25°C

VCE = 8 V, IC = 10 mA, Zo = 50 Ω

S

Frequency

11

(GHz) Mag. Ang. (dB) Mag. Ang. (dB) Mag. Ang. Mag. Ang.

0.100 0.78 -39 28.4 26.3 154 -36.4 0.015 71 0.91 -16

0.200 0.71 -71 26.9 22.1 134 -31.7 0.026 59 0.79 -27

0.300 0.65 -95 25.2 18.1 122 -29.8 0.032 50 0.67 -34

0.400 0.61 -113 23.5 15.0 119 -28.8 0.036 44 0.58 -38

0.500 0.59 -127 22.0 12.6 114 -28.1 0.039 43 0.52 -40

0.600 0.57 -137 20.7 10.8 100 -27.5 0.042 43 0.47 -40

0.700 0.56 -146 19.6 9.5 95 -27.1 0.044 43 0.44 -41

0.800 0.56 -154 18.5 8.4 91 -26.5 0.047 43 0.42 -41

0.900 0.55 -160 17.6 7.6 86 -26.1 0.049 44 0.40 -42

1.000 0.55 -166 16.8 6.9 83 -25.8 0.051 47 0.38 -42

1.500 0.55 173 13.4 4.7 70 -23.8 0.064 49 0.34 -45

2.000 0.57 157 10.9 3.5 57 -22.0 0.079 49 0.32 -52

2.500 0.59 144 9.2 2.9 44 -20.6 0.093 48 0.31 -61

3.000 0.62 133 7.6 2.4 34 -19.3 0.108 47 0.30 -71

3.500 0.64 123 6.0 2.0 25 -18.1 0.124 45 0.30 -83

4.000 0.67 114 5.1 1.8 16 -17.0 0.141 42 0.31 -95

4.500 0.70 106 4.1 1.6 5 -15.9 0.159 39 0.32 -108

5.000 0.73 99 2.9 1.4 -3 -15.0 0.176 35 0.32 -121

5.500 0.76 93 1.6 1.2 -8 -14.2 0.193 31 0.34 -135

6.000 0.78 88 0.8 1.1 -18 -13.5 0.209 31 0.36 -150

S

21

S

12

S

22

AT-41586 Typical Noise Parameters at T

ZO = 50 Ω, IC = 10 mA, V

Frequency NF

CE

= 8 V

O

Γ

opt

= 25°C,

C

(GHz) (dB) Mag. Ang. RN/50 Ω

0.1 1.3 0.12 3 0.17

0.5 1.3 0.10 16 0.17

1.0 1.4 0.04 43 0.16

2.0 1.7 0.12 -145 0.16

35

30

25

20

15

10

5

0

0.1

Figure 5. AT-41586 Insertion Power
Gain, Maximum Available Gain and
Maximum Stable Gain vs. Frequency
at VCE = 8 V, IC = 10 mA.

|S |

21E

MSG

2

MAG

FREQUENCY (GHz)

6.01.0