HAMAMATSU P2750-08, P3257-30, P3981-01, P2750, P3981 Datasheet

...

INFRARED DETECTOR

(µm)

(

)

(

)

MCT photoconductive detector

P3257/P3981/P2750 series

Non-cooled type and TE-cooled type suitable for long, continuous operation

Features

Choice of spectral response (up to 12 µm) The band gap can be adjusted by controlling the composition ratio of HgTe and CdTe. Utilizing this fact, various types are available in different spectral characteristics.

Photoconductive element that decreases its resistance by input of infrared light

Custom devices available Custom devices not listed in this catalog are also available with different spectral response, active area size and number of element.

Easy-to-use infrared detector modules with preamp available

■

General ratings / Absolute maximum ratings

Dimensional

Type No.

P3257-30

P3257-31

P3981 P3981-01 P2750-08 P2750 P2750-06

*1: W ind ow ma terial S : Sapphire glass

outline/

Window

material *

➀

/Se

/Se TO-8

➁

/S TO-8 3

➁

/S TO-66 3

➂

/S TO-8

➁ ➃

/S TO-3

Se:

Package Cooling

with BNC connector

ZnSe

Non-cooled - - 50

One-stage

TE-cooled

Two-stage

TE-cooled

Three-stage

TE-cooled

Applications

Radiation thermometer

Gas analyzer

Infrared spectrophotometer

FTIR

laser monitor

Accessories (Optional)

Heatsink for one-stage TE-cooler A3179

Heatsink for two-stage TE-cooler A3179-01

Heatsink for three-stage TE-cooler A3179-04

Temperature controller C1103-05 (-25 to -75 ˚C)

Preamp C5185-01 (P3981/P2750 series)

Infrared detector modules with preamp

Active

area

(mm ) (mW ) (A) (mA) (°C) (°C)

1 × 1

0.25 × 0.25

Thermistor

power

dissipation

0.2

Absolute maximum ratings

TE-cooler

allowable

current

1.5 50

1.0

C1103-07 (20 to -30 ˚C)

P4631-10 (P3257-31) P4631 (P3981) P4631-04 (P2750)

Allowable

current

Operating

temperature

Topr

-40 to +60 -55 to +60

6 6 3

temperature

Storage

Tstg

■ Electrical and optical characteristics (Typ. unless otherwise noted)

Measurement

condition Element

Type No.

P3257-30 25 6.0 11.0 2 × 10-35.0 × 1053.0 × 1062.0 × 1055.0 × 10-71 (ns) 30 P3257-31 0 6.5 11.5 5 × 10-31.0 × 1066.0 × 1065.0 × 1052.0 × 10-71 (ns) 35 P3981 P3981-01 P2750-08 P2750 2 × 10 P2750-06 *2: Photo sensitivity changes with the bias current. The values in the above table are measured with the optimum bias current. *3: P3257-30/-31: λ=10.6 µm *4: P3257-30/-31: (800, 1200, 1)

temperature

(°C)

-30

-60 4.8 5.5

Peak

se nsitiv ity

wavelength

Cut-off

wavelen

3.6 4.6 1 × 10

4.8 5.4 3 × 1021.0 × 1086.0 × 1084.0 × 1092.5 × 10

(µm) (V/W )

sensitivit

Photo

λ=λ

p *

3 × 10

(500, 1200, 1) *

(cm· Hz

2.0 × 1082.0 × 1095.0 × 10102.0 × 10

5.0 × 1083.0 × 1092.0 × 10

Min.

∗

1/2

/W)

Typ.

(cm· Hz

1/2

/W)

∗

(λp *3, 1200, 1)

1/2

cm·Hz

NEP

λ=λ

W/Hz

5.0 × 10

1.3 × 10

p *

1/2

-12

-11

-12

Rise time

0 to 63 %

(µs)

10 600

2 160

3 200

Dark

resistance

(Ω)

■ Spectral response

MCT photoconductive detector

P3257/P3981/P2750 series

D* (λ, 1200, 1) (cm · Hz /W)

P3257-30/-31

P3257-31 (T=0 ˚C)

P3257-30 (T=25 ˚C)

2468 1210357911

WAVELENGTH (µm)

P2750/-06/-08

P2750/-06 (T= -60 ˚C)

P3981/-01

(Typ.)

KIRDB0164EB KIRDB0066EB

D* (λ, 1200, 1) (cm · Hz /W)

T= -30 ˚C

T=0 ˚C

2345

WAVELENGTH (mm)

■ D* vs. element temperature

(Typ.)

P3981

P2750

(Typ.)

P2750-08 (T= -30 ˚C)

D* (λ, 1200, 1) (cm · Hz /W)

23456

WAVELENGTH (µm)

■ S/ N vs. bias current (P2750)

9 8 7 6 5 4

RELATIVE VALUE

3 2 1 0

03512 4

(Typ.)

KIRDB0068EB

D* (λ, 1200, 1) (cm · Hz /W)

-80 0 40

-60 -40 -20 20

ELEMENT TEMPERATURE (˚C)

■ Cooling characteristics of TE-cooler

[Typ. Ta=25 ˚C, thermal resistance of heatsink=3 ˚C/W (one and two-stage TE-cooled),

ONE-STAGE TE-COOLED TYPE

TWO-STAGE TE-COOLED TYPE (TO-8)

-20

-40

-60

ELEMENT TEMPERATURE (˚C)

THREE-STAGE TE-COOLED TYPE

-80

0.40

1.2 ˚C/W (three-stage TE-cooled)]

TWO-STAGE TE-COOLED TYPE (TO-66)

0.8 1.2 1.6

KIRDB0174EA

CURRENT (mA)

KIRDB0070EC

CURRENT (A)

KIRDB0175EA

The detector must be operated in a range where the D* becomes Max.

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