HAMAMATSU P2680-02, P2680-03, P2038-03, P3207-05, P2038-02 Datasheet

INFRARED DETECTOR

PbSe photoconductive detector

P791/P2038/P2680 series, P3207-05

Detection capability up 5 µm range (TE-cooled type)

Hamamatsu provides various types of PbSe photoconductive cells including room temperature operation types and thermoelectrically cooled
types. Cooled type PbSe photoconductive cells offer higher sensitivity and improved S/N, and are widely used in precision photometry such as in
analytical instruments.

Features

l

High-speed response

l

Room temperature operation
Compared to other types of detectors used in the same
wavelength range, PbSe cells have higher response
speed and can also operate at room temperature,
making them useful in a wide range of applications
such as gas analyzers, etc.

l

Lower temperature detection limit: 50 ˚C approx.

■ Specification / Absolute maximum ratings

Type No.

P791-11 2 × 2
P791-13
P3207-05
P2038-02 2 × 2
P2038-03
P2680-02 2 × 2
P2680-03

Dimensional

outline

➀

➁

➂

➃

Package Cooling

TO-5 Non-cooled

One-stage

TO-8

TE-cooled
Two-stage
TE-cooled

Active

area

(mm)

3 × 3
2 × 2

3 × 3

3 × 3

Applications

l

Radiation thermometer

l

Flame detector

l

Gas analyzer

l

Film thickness gauge

Accessories (Optional)

l

Heatsink for one-stage TE-cooled type A3179

l

Heatsink for two-stage TE-cooled type A3179-01

l

Temperature controller for TE-cooled type C1103-04

l

Preamplifier for PbS/PbSe photoconductive detector C3757-02

l

Infrared detector module with preamp Non-cooled type

Absolute maximum ratings

Thermistor

resistance

(kW)

Thermistor

power

dissipation

TE-cooler

current

dissipation

(mW) (A) (V) (°C) (°C)

-- -

1.5

90.2

1.0

Cooled type P4639

Supply

voltage

Operating

temperature

Topr

Storage

temperature

Tstg

100 -30 to +50 -55 to +60

P4245

■ Electrical and optical characteristics (Typ. unless otherwise noted)

Measurement

condition

Element

Type No.

temperature

T

(°C) (µm) (µm)
P791-11 7 × 10 1 × 10
P791-13
P3207-05 *



P2038-02 2.2 × 10!3 × 10
P2038-03
P2680-02 2.7 × 10!4 × 10
P2680-03

25

-10 4.1 5.1

-20 4.2 5.2

*1: Half width 400 nm
*2: Chopping frequency: 600 Hz, load resistance: nearly equal to detector element dark resistance

Peak

sensitivity

wavelength

lp

4.0

4.3

Cut-off

wavelength

lc

4.8

Photo sensitivity

S *

l=lp

Vs=15 V

Min.

(V/W)

3 × 10 5 × 10
7 × 10

Typ.

(V/W)

1 × 10

1 × 10!1 × 10

1.2 × 10!2 × 10

!

!

!

!

!

!

*

D

(500, 600, 1)

Min.

(cm·Hz

5 × 10

1/2

/W)

%

Typ.

(cm·Hz

1 × 10

1/2

/W) (cm· Hz

&

- - 8 × 10

1 × 10

2 × 10

&

&

3 × 10

4 × 10

&

&

(lp, 600, 1)

1 × 10

3 × 10

4 × 10

D

tr

Rise time

*

0 to 63 %

/W)

'

&

'

'

Max.

(µs)

3 0.3 to 1.5

5

1/2

Dark

resistance

Rd

(MW)

1.7 to 7.0

1.8 to 8.0

1

PbSe photoconductive detector

■ Spectral response

P791/P2038/P2680 series P3207-05

100

P791/P2038/P2680 series, P3207-05

(Typ.)

100

(Typ.)

80

60

-10 ˚C

40

RELATIVE VALUE (%)

20

0

1234567

25 ˚C

WAVELENGTH (µm)

■ S/N vs. supply voltage

600

LIGHT SOURCE: BLACK BODY 500 K
INCIDENT ENERGY: 16.7 µW/cm
CHOPPING FREQUENCY: 600 Hz

500

FREQUENCY BANDWIDTH: 60 Hz
Supply voltage is the
value which contains

400

load resistance

300

SIGNAL (µV)

200

100

S

N

-20 ˚C

(Typ. Ta=25 ˚C)

2

80

60

40

RELATIVE VALUE (%)

20

0

1234567

KIRDB0280EA KIRDB0281EA

WAVELENGTH (µm)

■ S/N vs. chopping frequency

3

18

15

12

9

NOISE (µV)

6

3

10

LIGHT SOURCE: BLACK BODY 500 K
INCIDENT ENERGY: 16.7 µW/cm
SUPPLY VOLTAGE: 15 V

2

10

RELATIVE S/N

(Typ. Ta=25 ˚C)

2

S/N

S

N

1

0

0

10 20 30 40 50 60

SUPPLY VOLTAGE (V)

0

10070 80 90

KIRDB0052EC

10

2

10

CHOPPING FREQUENCY (Hz)

3

10

4

10

KIRDB0053EB

Increasing the chopping frequency re­duces the 1/f noise and results in an S/N
improvement. The S/N can also be im­proved by narrowing the noise bandwidth
using a lock-in amplifier.

■ Photo sensitivity temperature characteristic ■ Dark resistance, rise time temperature characteristics

3

10

2

10

LIGHT SOURCE: BLACK BODY 500 K
SUPPLY VOLTAGE: 15 V
INCIDENT ENERGY: 16.7 µW/cm
CHOPPING FREQUENCY: 600 Hz

RELATIVE SENSITIVITY

1

10

-20

-100 102030405060

ELEMENT TEMPERATURE (˚C)

Cooling the device enhances its sensi­tivity, but the sensitivity also depends
on the load resistance in the circuit.

(Typ.)

2

KIRDB0054EB

3

10

2

10

RISE TIME

RELATIVE VALUE

1

10

ELEMENT TEMPERATURE (˚C)

DARK RESISTANCE

02010 40 5030 60-20 -10

(Typ.)

KIRDB0055EB

2