HAMAMATSU P2532-01, P2682-01 Datasheet
INFRARED DETECTOR
y
PbS photoconductive detector
P2532-01
,
P2682-01
Infrared detectors utilizing photoconductive effects
Features
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Room temperature operation
Makes PbS cells useful in a wide range of applications
including radiation thermometers and flame monitors
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High sensitivity
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Large active area
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Low price
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Lower temperature detection limit: 100 ˚C
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Thermoelectrically cooled types
Cooling a PbS cell increases sensitivity and improves
S/N, so cooled types are widely used in precision
photometry such as in analytical instruments.
Applications
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Radiation thermometers
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Flame monitors
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Water content analyzers
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Food ingredient analysis
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Spectrophotometers
Accessories (Optional)
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Heatsink for one-stage TE-cooled type A3179
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Heatsink for two-stage TE-cooled type A3179-01
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Temperature controller for TE-cooled type C1103-04
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Preamplifier for PbS/PbSe photoconductive detector C3757-02
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Power supply for amplifier C3871
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Infrared detector module with preamp
Cooled type P4638
■ Specification / Absolute maximum ratings
Absolute maximum ratings
TE-cooler
current
dissipation
1.5
1.0
Type No.
P2532-01
P2682-01
Dimensional
outline/
Window
material *
/S
➀
/S
➁
Package Cooling
1
One-stage
TO-8
TE-cooled
Two-stage
TE-cooled
Active
(mm)
4 × 5 9 0.2
area
Thermistor
resistance
(kΩ)
Thermistor
power
dissipation
(mW) (A) (V) (°C) (°C)
■ Electrical and optical characteristics (Typ. unless otherwise noted)
p
Typ.
(V/W)
8 × 10
2
*
Min.
(cm· Hz
4
5 × 10
∗
D
(500, 600, 1)
1/2
/W)
8
8
Typ.
(cm· Hz
1 × 10
2 × 10
1/2
/W) (cm·Hz
9
9
Measurement
condition
Type No.
P2532-01 -10 2.4 3.1 3 × 10
P2682-01 -20 2.5 3.2 6 × 1041.6 × 1058 × 10
*1: Window material S: sapphire glass
*2: Chopping frequency: 600 Hz, load resistance: nearly equal to detector element dark resistance
Element
temperature
(°C) (µm) (µm)
Peak
sensitivity
wavelength
p
λ
Cut-off
wavelength
c
λ
Photo sensitivit
S
λ=λ
Vs=15 V
Min.
(V/W)
4
Supply
voltage
100
∗
D
(λp, 600, 1)
1/2
/W)
11
1 × 10
11
2 × 10
tr
Storage
temperature
Tstg
Dark
resistance
Rd
(MΩ)
0.5 to 10
0.8 to 10
Operating
temperature
Topr
-30 to +50 -55 to +50
Rise time
0 to 63 %
Max.
(µs)
600
1
PbS photoconductive detector
P2532-01, P2682-01
■ Spectral response
100
80
60
25 ˚C
40
RELATIVE VALUE (%)
20
0
1423 5
-20 ˚C
-10 ˚C
WAVELENGTH (µm)
■ S/N vs. chopping frequency
3
10
LIGHT SOURCE: BLACK BODY 500 K
INCIDENT ENERGY: 4.8 µW/cm
SUPPLY VOLTAGE: 15 V
tr: 200 µs
S/N
(Typ. Ta=25 ˚C)
2
(Typ.)
KIRDB0279EA
■ S/N vs. supply voltage
800
SIGNAL
600
400
SIGNAL (µV)
200
00
0
LIGHT SOURCE: BLACK BODY 500 K
INCIDENT ENERGY: 4.8 µW/cm
CHOPPING FREQUENCY: 600 Hz
FREQUENCY BANDWIDTH: 60 Hz
10 20
NOISE
30
(Typ. Ta=25 ˚C)
2
40 50 60
8
7
6
5
4
3
2
1
SUPPLY VOLTAGE (V)
If voltage of higher than 60 V is applied,
the noise increases exponentially, degrading the S/N. The device should be
operated at 60 V or less.
■ Photo sensitivity temperature characteristic
3
10
(Typ.)
NOISE (µV)
KIRDB0046EA
S
2
10
2
10
RELATIVE S/N
RELATIVE SENSITIVITY
LIGHT SOURCE: BLACK BODY 500 K
N
1
10
1
10
2
10
CHOPPING FREQUENCY (Hz)
Increasing the chopping frequency reduces the 1/f noise and results in an S/N
improvement. The S/N can also be im-
3
10
KIRDB0047EB
INCIDENT ENERGY: 4.8 µW/cm
CHOPPING FREQUENCY: 600 Hz
SUPPLY VOLTAGE: 15 V
1
10
-20
-100 102030405060
ELEMENT TEMPERATURE (˚C)
Cooling the device enhances its sensitivity, but the sensitivity also depends
on the load resistance in the circuit.
proved by narrowing the noise bandwidth
using a lock-in amplifier.
■ Dark resistance, rise time temperature characteristics ■ Photo sensitivity linearity
3
10
2
10
RISE TIME
RELATIVE VALUE
DARK RESISTANCE
(Typ.)
2
10
1
10
0
10
-1
10
RELATIVE OUTPUT
-2
10
(Typ. Ta=25 ˚C, FULLY ILLUMINATED)
2
KIRDB0048EB
1
10
-10 0 10 20 30 40 50 60-20
ELEMENT TEMPERATURE (˚C)
10
KIRDB0049EB
DEPENDENT ON NEP
-3
-9
10
10-810
INCIDENT ENERGY (W/cm2)
-7
-6
-5
10
10
-4
10
KIRDB0050EA
By making the incident light spot smaller
than the active area, the upper limit of
the linearity becomes lower.
2
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