HAMAMATSU P2405, P1395-01, P2478-01 Datasheet

VISIBLE DETECTOR

γ

CdS photoconductive cell

Resin coating

·dual

type

Low cost dual-element sensor with standard size

CdS photoconductive cells utilize photoconductive effects in semiconductors that decrease their resistance when illuminated by light.
These sensors are non-polar resistive elements with spectral response characteristics close to the human eye (luminous efficiency), thus making
their operating circuits simple and small.
Dual-element sensors can be used to compare the signal from each element or perform signal processing by using a separation circuit.

Features

l

Thin substrate

l

Low price

Absolute maximum ratings / Characteristics (Typ. Ta=25 °C, unless otherwise noted, per 1 element)

■

Absolute maximum ratings Characteristics *

Supply

voltage

(Vdc) (mW) (°C) (nm)

➀
➁

➂

) - log (R10)

) - log (E10)

50 25

100 50

log (R

log (E

Dimensional

outline

100

100

Type No.

5R type

P1395-01
7R type
P2405
P2478-01

*1: All characteristics are measured after exposure to light (100 to 500 lx) for one to two hours.
*2: The light source is a standard tungsten lamp operated at a color temperature of 2856 K.
*3: Measured 10 seconds after shutting off the 10 lx light.
*4: Typical gamma characteristics (within ±0.10 variations) between 100 lx to 10

100

γ =

10

, E10: illuminance 100 lx, 10

E

100

, R10: resistance at 100 lx and 10

R

100

*5: The rise time is the time required for the sensor resistance to reach 63 % of the saturated conductance level (when fully

illuminated). The fall time is the time required for the sensor resistance to decay from the saturated conductance level to
37 %.

Power

dissipation

lx

P

respectively

lx



Ambient

temperature

Ta

-30 to +60

-30 to +60

sensitivity

wavelength

Applications

l

Sensor for various control device

1

Peak

p

λ

550 5 15 0.1 0.60 120 250

520 45 135 20 0.90 20
530 25 75 1 0.70

Resistance *

10 lx, 2856 K 0

Min.

(kΩ)

Max.

(kΩ)

2

10



3

*

lx

Min.

(MΩ)

lx

100 to 10

Response time 10

4

*

Rise timetrFall time

(ms) (ms)

lx

50

40

5

*

lx

tf

CdS photoconductive cell

Resin coating

·

dual type

■

Resistance vs. illuminance

1000

100

10

(Typ. Ta=25 ˚C, light source: 2856 K)

RESISTANCE (kΩ)

1

P2405

P2478-01

P1395-01

■

Resistance vs. ambient temperature

140

120

100

80

(Typ. light source: 2856 K, 10 lx)

P2478-01

RELATIVE RESISTANCE (%)

0.1

0.1 1 10 100

ILLUMINANCE (lx)

■

Dimensional outlines (unit: mm)

KCDSB0020EA

60

-30 -20 0 20 40 60 80

AMBIENT TEMPERATURE (˚C)

➀ P1395-01 ➁ P2405 ➂ P2478-01

P2405

P1395-01

KCDSB0021EA

ACTIVE AREA

0.45
LEAD

5.1 ± 0.2

3.4

COMMON

4.3 ± 0.2

2.5 MAX.25 ± 2

KCDSA0004EA

ACTIVE AREA

0.5
LEAD

7.0 ± 0.2

5.0

COMMON

ACTIVE AREA

5.9 ± 0.2

7.0 ± 0.2

5.1

2.5 MAX.

27 ± 2

0.5
LEAD

KCDSA0005EA KCDSA0006EA

2.0

5.9 ± 0.2

2.5 MAX.

27 ± 2

Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.

HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: [phone], Fax: [phone], http://www.hamamatsu.com

U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: [phone], Fax: [phone]
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: [phone], Fax: [phone]
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: [phone], Fax: [phone]
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: [phone], Fax: [phone]
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: [phone], Fax: [phone]
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: [phone], Fax: [phone]

Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2001 Hamamatsu Photonics K.K.

Cat. No. KCDS1003E01
May. 2001 DN