VISIBLE DETECTOR
CdS photoconductive cell
Resin coating type (5R type)
Standard type designed for general-purpose, wide application
CdS photoconductive cells utilize photoconductive effects in semiconductors that decrease their resistance when illuminated by light. These
sensors are non-polar resistive elements with spectral response characteristics close to the human eye (luminous efficiency), thus making their
operating circuits simple and small.
Features
l
Small size, thin package
l
Low price
l
Wide range of sensor lineup
Applications
l
Programed electronic shutter and stroboscope light control
for compact camera
l
Auto dimmer for digital display, CRT and room illumination
l
Sensor for automatic light on/off
l
Sensor for electronic toy and teaching aid material
■ Absolute maximum ratings / Characteristics (Typ. Ta=25 °C, unless otherwise noted)
Absolute maximum ratings Characteristics *
Supply
log (R
log (E
voltage
(Vdc) (mW) (°C) (nm)
100
50 -30 to +60 560
100
100
) - log (R10)
100
) - log (E10)
Type No.
P687-02 30 -30 to +50 620 5 20 5.0 0.70 60 25
P1201-04 200
P1201-06
P1241-04 3 9 0.2 0.70
P1241-05 8 24 0.5 0.70
P1241-06
P1444 10 50 5.0
P1445
*1: All characteristics are measured after exposure to light (100 to 500 lx) for one to two hours.
*2: The light source is a standard tungsten lamp operated at a color temperature of 2856 K.
*3: Measured 10 seconds after shutting off the 10 lx light.
*4: Typical gamma characteristics (within ±0.10 variations) between 100 lx to 10 lx
100
γ =
10
E
, E: illuminance 100 lx, 10 lx
R
, R: resistance at 100 lx and 10 lx respectively
*5: The rise time is the time required for the sensor resistance to reach 63 % of the saturated conductance level (when fully
illuminated). The fall time is the time required for the sensor resistance to decay from the saturated conductance level to
37 %.
Power
dissipation
P
50 -30 to +60 540 50
30
Ambient
temperature
Ta
-30 to +50 620
Peak
sensitivity
wavelength
lp
Cell resistance *
10 lx, 2856 K 0 lx *
Min.
(kW)
5 20 0.5 0.75
48 140 20
Max.
(kW)
100
Min.
(MW)
20 0.90 40 30
Response time 10
"
g
*
!
100 to 10
0.85 40 10
Rise timetrFall time
lx
lx
tf
(ms) (ms)
50 40
*
#
1
CdS photoconductive cell
■■
■
■■
Cell resistance vs. illuminance
10000
(Typ. Ta=25 ˚C, light source: 2856 K)
Resin coating type (5R type)
■■
■
■■
Resistance temperature characteristics
140
(Typ. light source: 2856 K, 10 lx)
1000
100
10
CELL RESISTANCE (kΩ)
P687-02
P1241-06
P1241-05
1
0.1 1 10 100
ILLUMINANCE (lx)
■■
■
■■
Dimensional outline (unit: mm)
ACTIVE AREA
P1445
P1241-04
4.3 ± 0.2
P1201-04
P1201-06
P1444
KCDSB0023EA
P1444, P1445
P1241-04/-05/-06
120
100
80
P687-02
P1201-04/-06
CHANGE IN ILLUMINATED RESISTANCE (%)
60
-30 -20 0 20 40 60 80
AMBIENT TEMPERATURE (˚C)
KCDSB0024EA
5.1 ± 0.2
3.4
2.5 MAX.
27 ± 2
0.5
LEAD
KCDSA0001EA
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2001 Hamamatsu Photonics K.K.
2
Cat. No. KCDS1005E01
Oct. 2001 DN