HAMAMATSU N7640, N7220 Datasheet

EB-CCD

TAPPB0068EA

SENSITIVITY (V

.

µJ

-1

.

cm

-2

)

200

1

10

100

1000

300 400 500 600 700 800 900 1000 1100

EB-CCD
N7640

NORMAL 2/3" CCD

WAVELENGTH (nm)

TV SCAN RATE TYPE : N7640
SLOW SCAN TYPE : N7220

PRELIMINARY

For Low-Light-Level Imaging with high S/N ratio

IMAGING COMPARISON

Using Resolution Test Chart

Commercial 2/3-inch CCD

■ Imaging Conditions

Object illuminance: 0.1 lx
Lens: FUJINON-TV Zoom Lens/H6x 12.5R :F1.2/f2

EB-CCD N7640

OVERVIEW

The EB-CCD is an absolutely new high-sensitivity imaging
device that employs the “Electron Bombardment (EB)” effect for
image intensification. The EB-CCD basically consists of a
photocathode and a CCD chip arranged in parallel in a vacuum
tube. An optical image is converted at the photocathode into an
electron image, which is then accelerated and directly bom­bards the CCD surface to produce electron multiplication. Even
a low-light-level image can be brought into view with a high S/N
ratio.
Two types of EB-CCD are available depending on the readout
method: the N7640 designed to operate at the TV scan rate
and the N7220 for slow scan readout. Both types are compact
and simple in structure, and deliver high sensitivity yet ensure
high S/N ratio. The EB-CCD will open up new applications as
the next generation of low-light-level imaging devices.

SENSITIVITY COMPARISON

(Calculated data)

APPLICATIONS

SPECTRAL RESPONSE

●High sensitivity video camera

• Semiconductor wafer inspection

• Real time fluorescence observation

• Biochemical emission imaging

• Biophoton imaging

FEATURES

TV scan rate type

●Resolution 400 TV lines

●Gain 700

●Detection limit

*1

0.3 mlx

Slow scan type

●Resolution 450 TV lines

●Gain 1300

●Detection limit Detectable down to single photon

region

*1: Minimum illuminance on the photocathode required to produce an image.

SPECIFICATIONS

TII B0020EA

2

10

1

10

QUANTUM

0

10

QUANTUM EFFICIENCY (%)

-1

10

CATHODE RADIANT SENSITIVITY (mA/W)

-2

10

100 200 300 400 500 600 700

EFFICIENCY

WAVELENGTH (nm)

CATHODE
SENSITIVITY

800 900

1000

●EB-CCD

Parameter

Focusing Method
Window Material
Photocathode
Maximum Supply Voltage
Gain
Limiting Resolution
Effective Area (H✕V)
Casing Material
Lead Wire Sheath
Dimension

*2: N7640

*2

(Typ.)

(Typ.)

at -6 kV, N7220 at -8 kV

9.2 ✕ 6.8

●Internal CCD

Parameter

Drive Method
CCD Format
Pixel Size
Number of Effective Pixels (H✕V)
Saturation Charge
Dark Current
Readout Noise
CCD Readout Frequency
Vertical Clock
Horizontal Clock

Output

*3: At 25 °C, MPP (Multi-Pinned Phase) operation, 33 ms/frame
*4: At 0 °C, MPP (Multi-Pinned Phase) operation

*5

MOSFET source follower, two stages

Frame transfer

2/3 inch format

658 ✕ 490

*3

80 e- / (pixel·frame)

2 phases
2 phases

with load

●Ratings

Parameter

Operating Temperature Range
Storage Temperature Range

N7640 N7220

Proximity-focused

Synthetic silica

Multialkali

-6
700
400

Poly Oxy Methylene (POM)

Teflon

φ53 ✕ 16.5 (excluding lead pins)

N7640 N7220 Unit

Full frame transfer

14 ✕ 14

3

65 ✕10

100

14

MOSFET source follower, one stage

*5: N7640 at 12 MHz, N7220 at 150 kHz

Min. Max.

-30

-40

*4

-8

1300

450

12.2 ✕ 12.2

1 inch format

24 ✕ 24

512 ✕ 512

200 ✕10

300 e- / (pixel·s)

2 phases
2 phases

3

50

1

+40
+40

Unit

kV

TV lines

mm

mm

mm

electrons

e- RMS

MHz

Unit

-

-

-

-

-

-

-

-

-

-

-

-

-

°C
°C