HIGH POWER QUASI-CW
LASER DIODE L8411
PRELIMINARY DATA
High power Quasi-CW operation
FEATURES
High optical power : 50 to 100W/bar in average
High stability
Long life
High cost performance
APPLICATIONS
Pumping source for solid state lasers
Materials processing
Welding
Soldering
Medical systems
Our high power Quasi-CW laser diode, L8411, features several advantages such as high stability with long life, high
cost performance with compact structure, and higher peak intensity. It can be applied as light source to pump solid
state lasers, for material processing like welding or soldering, and for medical systems. The lasing areas consist of
small laser emitters arranged in line and are thus called “Bar” structure. A high Quasi-CW output power as high as
10kW at peak was achieved by stacking ten Bars. Cooling methods can be selected from Peltier-cooling, water-cooling
and Funryu-cooling (patent pending : Japan 8-139479, WO 00/11717). A high power laser module with a focusing lens
and a driving electronics are optionally available.
ABSOLUTE MAXIMUM RATINGS (Each bar)
Parameter
Radiant Output Power / bar
Reverse Voltage
Pulse Duration
Duty Ratio
Operating Temperature
Storage Temperature
Symbol
φe
VR
Tw
DR
Top
Tstg
Low Duty Ratio Type
105
2.0
200
1
CHARACTERISTICS (Each bar, Ta=20˚c)
Parameter
Radiant Output Power / bar
Forward Current
Peak Emission Wavelength
Spectral Radiation Half Bandwidth
Forward Voltage
Beam Spread Angle : Parallel
: Vertical
Lasing Threshold Current
Array Length
Maximum Number of Stacks
*Contact sales stuff for emitting wave-length and radiant output power (φe) other than above.
Symbol
φe
IF
λp
∆λ
VF
θ//
θ⊥
Ith
-
-
Low Duty Ratio Type
Conditions
φe=100W
φe=100W
φe=100W
φe=100W
FWHM
Value
100
120
808
4
2.0
10
35
25
10
25
+15 to +35
-20 to +40
High Duty Ratio Type
55
2.0
200
20
High Duty Ratio Type
Conditions
φe=50W
φe=50W
φe=50W
φe=50W
FWHM
Value
50
80
808
5
1.9
10
35
20
10
6
Unit
W
V
µsec
%
˚c
˚c
Unit
W
A
nm
nm
V
˚ (degree)
˚ (degree)
A
mm
stack
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2000 Hamamatsu Photonics K.K.
HIGH POWER QUASI-CW LASER DIODE L8411
Figure 1: Radiant Output Power vs. Forward Current
Low Duty Ratio Type (Typ.)
120
Pulse Duration=200µs
Frequency=50Hz
100
80
60
40
RADIANT OUTPUT POWER (W)
20
0
0
50
FORWARD CURRENT (A)
100
150
Figure 3: Typical Emission Spectrum
100
80
60
40
Figure 2: Radiant Output Power vs. Forward Current
High Duty Ratio Type (Typ.)
100
Pulse Duration=200µs
Frequency=1KHz
80
60
40
20
RADIANT OUTPUT POWER (W)
0
0
20
40 80
FORWARD CURRENT (A)
60
100
Figure 4: Relationship Between Total Optical Output Power
and Duty Ratio
2500
1000
500
100
50
Peltier-cooling
Funryu-cooling
Water-cooling
20
RELATIVE RADIANT OUTPUT POWER (%)
0
799
802
808
805
WAVELENGTH (nm)
811
Figure 5: Dimensional Outline (Unit : mm)
Low Duty Ratio Type (Peltier-cooling)
10.6
20.0
7.9
814
817
30.0
CATHODE(-)
ANODE(+)
10
TOTAL OPTICAL OUTPUT POWER (W)
1
0.1
1
DUTY RATIO (%)
High Duty Ratio Type (Water-cooling)
14.5
CATHODE(-)
10.0
14.0
10
30.0
ANODE(+)
20
http://www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., International Sales Division
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Cat. No. LLD1008E01
OCT. 2000 SI
Printed in Japan (200)