HAMAMATSU G3297, G1740, G1738, G1737, G1736 Datasheet
...
PHOTODIODE
GaAsP photodiode
Diffusion type
Red sensitivity extended type
Features
l
Low dark current
l
High stability
l
Red sensitivity extended type
■
General ratings / Absolute maximum ratings
Dimensional
Type No.
G1735
G1736
G1737
G1738
G1740
G3297
outline/
Window
material *
/K TO-18 1.3 × 1.3 1.66
➀
/K TO-5 2.7 × 2.7 7.26
➁
/K TO-8 5.6 × 5.6 29.3
➂
/R Ceramic 1.3 × 1.3 1.66
➃
/R Ceramic 5.6 × 5.6 29.3
➄
/L TO-18 1.3 × 1.3 1.66
➅
Package
Active area
size
(mm) (mm
Applications
l
Analytical instruments
l
Color identification
Effective
active
area
2
) (V) (°C) (°C)
Reverse
V
Absolute maximum ratings
Operating
voltage
R
Max.
5 -30 to +80 -40 to +85
temperature
Topr
Storage
temperature
Tstg
■
Electrical and optical characteristics (Typ. Ta=25
Spectral
response
Type No.
G1735 0.2 0.25 2 20 0.5 250 5 25 2.0 × 10
G1736 0.8 1.1 5 50 1.8 1200 2 15 3.2 × 10
G1737 4 5 10 100 10 4500 1 5 4.5 × 10
G1738 0.2 0.25 2 20 0.5 250 5 25 2.0 × 10
G1740 4 5 10 100 10 4500 1 5 4.5 × 10
G3297
* Window material K: borosilicate glass, L: lens type borosilicate glass, R: resin coating
range
λ
(nm) (nm)
400 to 760
Peak
sensitiv ity
wavelength
λ
710 0.4 0.22 0.29
Photo sensitivity
p
p
λ
S
(A/W)
GaP
LED
560 nm
He-Ne
633 nm
°C
, unless otherwise noted)
Short circuit
current
Isc
100
laser
Min.
Typ.
(µA)
(µA)
1.5 1.8 2 20
Temp.
of
D
I
CID
T
1.07
Rise time
R
V
L
R
Dark
current
I
4
V
(pA)
Max.
=10 mV
lx
D
V4=1 V
(pA)
coefficient
(times/°C)
Terminal
capacitance
tr
=0 V
=1 k
(µs) (pF)
0.5 250 5 25 2.0 × 10
VR=0 V
Ω
f=10 kHz
Ct
Shunt
resistance
Rsh
R
=10 mV
V
Min.
Typ.
(GΩ)
(GΩ)
NEP
(W/Hz
1/2
)
-15
-15
-15
-15
-15
-15
GaAsP photodiode
Diffusion type
■■
■
■■
Spectral response
0.5
0.4
0.3
0.2
0.1
PHOTO SENSITIVITY (A/W)
0
200 400 600
WAVELENGTH (nm)
■■
■
■■
Rise time vs. load resistance
10
ms
2
G1737, G1740
G1736
3
10
10
1
ms
100
µs
10
µs
RISE TIME
1
µs
100
ns
10
LOAD RESISTANCE (Ω)
(Typ. Ta=25 ˚C)
(Typ. Ta=25 ˚C, VR=0 V)
G1735, G1738
G3297
4
5
10
800
KGPDB0024EA
6
10
KGPDB0026EA
■■
■
■■
Photo sensitivity temperature characteristic
+1.5
+1.0
+0.5
0
(Typ.)
TEMPERATURE COEFFICIENT (%/˚C)
-0.5
400200
600 800
WAVELENGTH (nm)
■■
■
■■
Dark current vs. reverse voltage
1 nA
100 pA
10 pA
G1737, G1740
G1736
(Typ. Ta=25 ˚C)
DARK CURRENT
1 pA
G1735, G1738, G3297
100
fA
0.01 0.10.001
110
REVERSE VOLTAGE (V)
KGPDB0025EA
KGPDB0027EA
■■
■
■■
Shunt resistance vs. ambient temperature
10 TΩ
1 TΩ
100 GΩ
10 GΩ
1 GΩ
G1735, G1738, G3297
G1736
G1737, G1740
(Typ. VR=10 mV)
SHUNT RESISTANCE
100 MΩ
10 MΩ
020-20
40 60 80
AMBIENT TEMPERATURE (˚C)
KGPDB0028EA
■■
■
■■
Short circuit current linearity
(Typ. Ta=25 ˚C, A light source fully illuminated)
0
10
-2
10
-4
10
-6
10
-8
10
-10
10
-12
10
OUTPUT CURRENT (A)
-14
10
-16
10
-16
10
DEPENDENT ON NEP
-1410-1210-1010-810-610-410-2
10
INCIDENT LIGHT LEVEL (lx)
RL=100 Ω
0
10
KGPDB0008EA
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