HAMAMATSU G3067, G2711-01, G1120, G1118, G1117 Datasheet
...
PHOTODIODE
(
)
GaAsP photodiode
Diffusion type
Photodiode for visible light detection
Features
l
Low dark current
l
High stability
■
General ratings / Absolute maximum ratings
Dimensional
Type No.
G1115
G1116
G1117
G1118
G1120
G3067
G2711-01
■
Electrical and optical characteristics (Typ. Ta=25
Type No.
G1115 0.12 0.15 1 10
G1116 0.45 0.6 2.5 25
G1117 22.5 5 50
G1118 0.12 0.15 1 10
G1120 22.5 5 50
G3067 0.75 0.95 1 10
G2711-01
* Window material K: borosilicate glass, L: lens type borosilicate glass, R: resin coating
outline/
Window
material *
/K TO-18 1.3 × 1.3 1.66
➀
/K TO-5 2.7 × 2.7 7.26
➁
/K TO-8 5.6 × 5.6 29.3
➂
/R Ceramic 1.3 × 1.3 1.66
➃
/R Ceramic 5.6 × 5.6 29.3
➄
/L TO-18 1.3 × 1.3 1.66
➅
/R Plastic 1.3 × 1.3 1.66
➆
Spectral
response
range
(nm) (nm)
300 to 680
sensitivity
wavelength
λ
Package
Peak
λ
640 0.3 0.29 0.29
Photo sensitivity
p
p
λ
S
(A/W)
GaP
LED
560 nm
Active area
size
(mm) (mm
°C
Short circuit
current
He-Ne
laser
633 nm
100
Min.
(µA)
0.15 0.18 1 10
Applications
l
Analytical instrument
l
Color identification
Effective
active
area
2
) (V) (°C) (°C)
, unless otherwise noted)
Dark
current
Max.
V4=10 mV
(pA)
D
I
V4=1 V
(pA)
Isc
lx
Typ.
(µA)
Reverse
voltage
R
Max.
V
5 -30 to +80 -40 to +85
Temp.
coefficient
of
D
I
CID
T
times/°C
1.07
Absolute maximum ratings
Operating
temperature
Topr
Rise time
VR=0 V
L
R
Terminal
capacitance
tr
=1 k
(µs) (pF)
1 300 10 80
4 1400 4 30
15 6000 2 15
1 300 10 80
15 6000 2 15
1 300 10 80
1 300 10 80
VR=0 V
Ω
f=10 kHz
Ct
Shunt
resistance
Rsh
R
=10 mV
V
Min.
(GΩ)
Storage
temperature
Tstg
NEP
Typ.
(GΩ)(W/Hz
1.5 × 10
2.5 × 10
3.5 × 10
1.5 × 10
3.5 × 10
1.5 × 10
1.5 × 10
1/2
)
-15
-15
-15
-15
-15
-15
-15
GaAsP photodiode
Diffusion type
■■
■Spectral response
■■
0.5
0.4
0.3
0.2
0.1
PHOTO SENSITIVITY (A/W)
0
200 400 600
WAVELENGTH (nm)
■■
■Rise time vs. load resistance
■■
10
ms
1
ms
G1117, G1120
(Typ. Ta=25 ˚C, VR=0 V)
G1116
(Typ. Ta=25 ˚C)
800
KGPDB0019EA
■■
■Photo sensitivity temperature characteristic
■■
+1.5
+1.0
+0.5
0
(Typ.)
TEMPERATURE COEFFICIENT (%/˚C)
-0.5
400200
600 800
WAVELENGTH (nm)
KGPDB0020EA
■■
■Dark current vs. reverse voltage
■■
1 nA
100 pA
(Typ. Ta=25 ˚C)
100
µs
10
µs
RISE TIME
1
µs
100
ns
10
2
3
10
G1115, G1118
G3067, G2711-01
4
10
5
10
6
10
LOAD RESISTANCE (Ω)
KGPDB0021EA
■■
■Shunt resistance vs. ambient temperature
■■
10 TΩ
1 TΩ
100 GΩ
10 GΩ
1 GΩ
SHUNT RESISTANCE
100 MΩ
10 MΩ
020-20
G1115, G1118
G3067, G2711-01
(Typ. VR=10 mV)
G1116
G1117, G1120
40 60 80
G1117, G1120
10 pA
G1116
DARK CURRENT
1 pA
100
fA
0.01 0.10.001
REVERSE VOLTAGE (V)
■■
■Short circuit current linearity
■■
(Typ. Ta=25 ˚C, A light source fully illuminated)
0
10
-2
10
-4
10
-6
10
-8
10
-10
10
-12
10
OUTPUT CURRENT (A)
-14
10
-16
10
-16
10
Refer to NEP value in characteristic table.
-1410-1210-1010-810-610-410-2
10
G1115, G1118
G2711-01, G3067
110
RL=100 Ω
10
KGPDB0022EA
0
AMBIENT TEMPERATURE (˚C)
KGPDB0023EA
INCIDENT LIGHT LEVEL (lx)
KGPDB0008EA
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