HAMAMATSU G1962, G1961, G1963 Datasheet
PHOTODIODE
g
g
GaP photodiode
G1961, G1962, G1963
Schottky type
Features
l
Low dark current
l
High UV sensitivity
■
General ratings / Absolute maximum ratings
Dimensional
Type No.
G1961 ➀/Q * TO-18 1.1 × 1.1 1.0
G1962 ➁/Q TO-5 2.3 × 2.3 5.2
G1963 ➂/Q TO-8 4.6 × 4.6 21
outline/
Window
material
Package
Active area
size
(mm) (mm
Applications
l
Analytical instruments
l
UV detection
Effective
active
area
Absolute maximum ratings
Reverse
voltage
R
Max.
2
) (V) (°C) (°C)
V
5 -10 to +60 -20 to +70
Operating
temperature
Topr
Storage
temperature
Tstg
■
Electrical and optical characteristics (Typ. Ta=25
th
p
λ
Photo sensitivity
S
(A/W)
Hg
line
p
λ
400 nm
254 nm
Spectral
response
Type No.
G1961 0.04 0.05 2.5 25 5 400 4 40 5.4 × 10
G1962 0.23 0.3 5 50 10 1500 2 20 7.6 × 10
G1963
* Window material Q: quartz glass
ran
(nm) (nm)
190 to 550
Peak
sensitivity
e
wavelen
λ
440 0.12 0.03 0.1
°C
, unless otherwise noted)
4
V
(pA)
=10 mV
Dark
current
D
I
Max.
V4=1 V
(pA)
Short circuit
current
Isc
lx
Min.
Typ.
(µA)
(µA)
0.75 0.9 10 100
Temp.
coefficient
of
D
I
CID
T
(times/°C)
1.11
Rise time
R
V
L
R
Terminal
capacitance
tr
=0 V
=1 k
(µs) (pF)
30 5000 1 1 1.1 × 10
VR=0 V
Ω
f=10 kHz
Ct
Shunt
resistance
Rsh
VR=10 mV
Min.
Typ.
(GΩ)
(GΩ)
NEP
(W/Hz
1/2
)
-15
-15
-14
GaP photodiode
G1961, G1962, G1963
■■
■
■■
Spectral response
0.2
0.15
0.1
0.05
PHOTO SENSITIVITY (A/W)
0
190 400 600
WAVELENGTH (nm)
■■
■
■■
Rise time vs. load resistance
(Typ. Ta=25 ˚C)
800
KGPDB0014EA
■■
■
■■
Photo sensitivity temperature characteristic
+1.5
+1.0
+0.5
0
TEMPERATURE COEFFICIENT (%/˚C)
-0.5
190 400 600
WAVELENGTH (nm)
■■
■
■■
Dark current vs. reverse voltage
(Typ.)
800
KGPDB0017EB
10
ms
1
ms
100
µs
10
µs
RISE TIME
1
µs
100
ns
2
10
(Typ. Ta=25 ˚C, VR=0 V)
G1963
G1962
G1961
10
3
10
4
LOAD RESISTANCE (Ω)
10
1 nA
100 pA
10 pA
G1963
G1962
(Typ. Ta=25 ˚C)
DARK CURRENT
1 pA
100
5
10
6
fA
0.01 0.10.001
G1961
110
REVERSE VOLTAGE (V)
KGPDB0015EA
KGPDB0016EA
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