HAMAMATSU G1747, G1746 Datasheet
PHOTODIODE
GaAsP photodiode
G1746
,
G1747
Schottky type with extended red sensitivity
Features
l
Low dark current
l
Extended red sensitivity
l
High UV sensitivity
General ratings / Absolute maximum ratings
■
Dimensional
Type No.
G1746 ➀/Q TO-5 2.3 × 2.3 5.2
G1747 ➁/Q TO-8 4.6 × 4.6 21
outline/
Window
Material *
Package
Active area
size
(mm) (mm
Applications
l
l
l
Effective
active
area
Analytical instrument
Color identification
UV detection
Absolute maximum ratings
Reverse
voltage
Max.
V
2
) (V) (°C) (°C)
R
5 -10 to +60 -20 to +70
Operating
temperature
Topr
temperature
Storage
Tstg
■
Electrical and optical characteristics (Typ. Ta=25
Peak
Spectral
sensi-
response
Type No.
G1746 0.5 0.65 10 100
G1747
* Window material Q: quartz glass
190 to 760
tivity
range
wavelength
λ
λ
(nm) (nm)
710 0.22 0.02 0.18 0.2
Photo sensitivity
p
p
λ
(A/W)
Hg
line
254 nm
S
GaP
LED
560 nm
He-Ne
633 nm
°C
, unless otherwise noted)
Short circuit
current
Isc
100
lx
laser
Min.
Typ.
(µA)
(µA)
1.8 2.4 20 200
4
V
(pA)
=10 mV
Dark
current
I
D
Max.
V4=1 V
(pA)
Temp.
coefficient
of
I
D
T
CID
(
times/°C
1.07
Rise time
V
R
R
L
)
Terminal
capacitance
tr
=0 V
=1 k
(µs) (pF)
3 1600 1 8
12 6000 0.5 2.5
V
Ω
f=10 kHz
Ct
=0 V
R
Shunt
resistance
Rsh
=10 mV
V
R
Min.
Typ.
(GΩ)
(GΩ)
NEP
(W/Hz
6.5 × 10
1.2 × 10
1/2
)
-15
-14
GaAsP photodiode
G1746, G1747
■■
■Spectral response
■■
0.3
0.25
0.2
0.15
0.1
PHOTO SENSITIVITY (A/W)
0.05
0
190 400 600
WAVELENGTH (nm)
■■
■Rise time vs. load resistance
■■
(Typ. Ta=25 ˚C)
800
KGPDB0039EA
■■
■Photo sensitivity temperature characteristic
■■
+1.5
+1.0
+0.5
0
TEMPERATURE COEFFICIENT (%/˚C)
-0.5
190 400 600
WAVELENGTH (nm)
■■
■Dark current vs. reverse voltage
■■
(Typ.)
800
KGPDB0040EA
10
ms
1
ms
100
µs
10
µs
RISE TIME
1
µs
100
ns
2
10
(Typ. Ta=25 ˚C, VR=0 V)
G1747
G1746
10
3
10
4
10
LOAD RESISTANCE (Ω)
1 nA
100 pA
G1747
10 pA
DARK CURRENT
1 pA
100
5
10
6
fA
0.01 0.10.001
(Typ. Ta=25 ˚C)
G1746
110
REVERSE VOLTAGE (V)
KGPDB0041EA
KGPDB0042EA
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