General Semiconductor ZY100, ZY12, ZY13, ZY11, ZY110 Datasheet
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MECHANICAL DATA
Case: DO-41 Plastic Case
Weight: approx. 0.34 g
MAXIMUM RATINGS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOL VALUE UNIT
Zener Current (see Table “Characteristics”)
Power Dissipation at Tamb = 25°C P
tot
2.0
1)
Watts
Junction Temperature T
j
150 °C
Storage Temperature Range T
S
– 55 to +150 °C
ZY1, ZY11 THRU ZY200
ZENER DIODES
12/16/98
SYMBOL MIN. TYP. MAX. UNIT
Thermal Resistance
R
thJA
––601)°C/W
Junction to Ambient Air
NOTES:
(1) Valid provided that leads are kept at ambient temperature at a distance of 10 mm from case.
FEATURES
♦ Silicon Power Zener Diodes
♦ For use in stabilizing and clipping circuits
with high power rating
♦ The Zener voltages are graded according to the
international E 24 standard. Smaller voltage tolerances are available upon request.
min. 1.0 (25.4)
max. 0.20 (5.2)
max.
∅
Cathode
0.035 (0.9)
Mark
max.
∅
0.11 (2.7)
min. 1.0 (25.4)
DO-41 Plastic
Dimensions are in inches and (millimeters)
ZY1, ZY11 THRU ZY200
ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Type
Zener
voltage
(2)
at
I
ZT
VZ(V)
Dynamic
resistance
at I
ZT
f = 1 kHz
max
rzj(Ω)
Temp. coeff.
of Zener volt.
at
I
ZT
α
VZ
(10–4/K)
Test
current
I
ZT
(mA)
Reverse
voltage
at
IR= 0.5µA
VR(V)
Admissible
Zener current
(1)
at T
amb
= 25°C
IZ(mA)
ZY1
(3)
0.71 … 0.82 0.5 (< 1) -26 … -16 100
_
1000
ZY11 10.4 … 11.6 4 (< 7) +5 … +10 50 > 9.2 135
ZY12 11.4 … 12.7 4 (< 7) +5 … +10 50 > 10 120
ZY13 12.4 … 14.1 5 (< 10) +5 … +10 50 > 10.7 110
ZY15 13.8 … 15.8 5 (< 10) +5 … +10 50 > 12 98
ZY16 15.3 … 17.1 6 (< 15) +6 … +11 25 > 13.3 90
ZY18 16.8 … 19.1 6 (< 15) +6 … +11 25 > 14.7 80
ZY20 18.8 … 21.2 6 (< 15) +6 … +11 25 > 16.5 72
ZY22 20.8 … 23.3 6 (< 15) +6 … +11 25 > 18.3 66
ZY24 22.8 … 25.6 7 (< 15) +6 … +11 25 > 20.1 60
ZY27 25.1 … 28.9 7 (< 15) +6 … +11 25 > 22.5 53
ZY30 28 … 32 8 (< 15) +6 … +11 25 > 25.1 48
ZY33 31 … 35 8 (< 15) +6 … +11 25 > 27.8 44
ZY36 34 … 38 21 (< 40) +6 … +11 10 > 30.2 40
ZY39 37 … 41 21 (< 40) +6 … +11 10 > 32.9 37
ZY43 40 … 46 24 (< 45) +7 … +12 10 > 35.6 33
ZY47 44 … 50 24 (< 45) +7 … +12 10 > 39.2 30
ZY51 48 … 54 25 (< 60) +7 … +12 10 > 42.8 27
ZY56 52 … 60 25 (< 60) +7 … +12 10 > 47.3 25
ZY62 58 … 66 25 (< 80) +8 … +13 10 > 51.7 21
ZY68 64 … 72 25 (< 80) +8 … +13 10 > 57.1 20
ZY75 70 … 79 30 (< 100) +8 … +13 10 > 63.2 18
ZY82 77 … 88 30 (< 100) +8 … +13 10 > 68.6 16
ZY91 85 … 96 60 (< 200) +9 … +13 5 > 75.7 15
ZY100 94 … 106 60 (< 200) +9 … +13 5 > 83.7 13
ZY110 104 …116 80 (< 250) +9 … +13 5 > 92.6 12
ZY120 114 … 127 80 (< 250) +9 … +13 5 > 101.6 11
ZY130 124 … 141 110 (< 300) +9 … +13 5 > 110.5 10
ZY150 138 … 156 110 (< 300) +9 … +13 5 > 123 9
ZY160 153 …171 150 (< 350) +9 … +13 5 >136 8.5
ZY180 168 … 191 150 (< 350) +9 … +13 5 > 149 8
ZY200 188 … 212 150 (< 350) +9 … +13 5 > 167 7.5
NOTES:
(1) Valid provided that leads are kept at ambient temperature at a distance of 10 mm from case
(2) Tested with pulses t
p
= 5 ms
(3) The ZY1 is a silicon diode operated in forward direction. Hence, the index of all parameters ratings should be “F” instead of “Z”. Connect the cathode lead to the
negative pole
RATINGS AND CHARACTERISTIC CURVES ZY1, ZY11 THRU ZY200
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