General Semiconductor ZTE1.5, ZTE2, ZTE2.4 Datasheet

Features
• Silicon Stabilizer Diodes
• Monolithic integrated analog circuits designed for small power stabilizer and limitation circuits, providing low dynamic resistance and high-quality stabilization performance as well as low noise. In the reverse direction, these devices show the behavior of forward-biased silicon diodes.
• These diodes are also available in MiniMELF
case with the type designation LL1.5 … LL 2.4.
Mechanical Data
Case: DO-35 Glass Case Weight: approx. 0.13g Packaging codes/options:
D7/10K per 13” reel (52mm tape), 20K/box D8/10K per Ammo tape, (52mm tape), 20K/box
DO-204AH (DO-35 Glass)
min. 1.083 (27.5)
min. 1.083 (27.5)
max. .150 (3.8)
max.
Cathode
.020 (0.52)
Mark
max.
.079 (2.0)
ZTE1.5 thru ZTE2.4
Voltage Stabilizers
Dimensions are in inches and (millimeters)
7/7/00
Operating Voltage Dynamic resistance Permissable operating current
at I
Z
= 5mA
(2)
at IZ= 5mA at T
amb
= 25°C
(1)
Type VZ (V) rzj()I
Z
max. (mA)
ZTE1.5 1.35 ... 1.55 13(<20) 120 ZTE2 2.0 .. . 2 . 3 18(<30) 120 ZTE2.4 2.2 ... 2.56 14(<20) 120
Notes: (1) Valid provided that electrodes are kept at ambient temperature at a distance of 8mm from case
(2) Tested with pulses t
p
= 5ms
Maximum Ratings (T
A
= 25°C unless otherwise noted)
Parameter Symbol Value Unit
Operating Current (see Table Characteristics”) Inverse Current I
F
100 mA
Power dissipation at T
amb
= 25°CP
tot
300
(1)
mW
Junction temperature T
J
150 °C
Storage temperature range T
S
–55 to +150 °C
Electrical and Thermal Characteristics (T
A
= 25°C unless otherwise noted)
Parameter Symbol Min. Typ. Max. Unit
Forward Voltage at IF= 10 mA V
F
––1.1 V
Temperature Coefficient of the ZTE1.5, ZTE2
α
VZ
––26 10–4/°C
stabilized voltage at I
Z
= 5 mA ZTE2.4 α
VZ
––34 10–4/°C
Thermal resistance junction to ambient air R
θJA
––0.4
(1)
°C/W
ZTE1.5 thru ZTE2.4
Voltage Stabilizers
Ratings and Characteristic Curves
(TA= 25OC unless otherwise noted)
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