General Semiconductor ZPD1, ZPD13, ZPD15, ZPD3, ZPD3.3 Datasheet
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FEATURES
♦ Silicon Planar Zener Diodes
♦ The Zener voltages are graded according to
the international E 12 standard. Smaller voltage
tolerances and other Zener voltages are available
upon request.
♦ These diodes are also available in the Mini-MELF case
with the type designation ZMM1 … ZMM75.
MECHANICAL DATA
Case: DO-35 Glass Case
Weight: approx. 0.13 g
MAXIMUM RATINGS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOL VALUE UNIT
Zener Current (see Table “Characteristics”)
Power Dissipation at T
amb
= 25°C P
tot
500
(1)
mW
Junction Temperature T
j
175 °C
Storage Temperature Range T
S
– 55 to +175 °C
NOTES:
(1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
ZPD1 THRU ZPD75
ZENER DIODES
min. 1.083 (27.5)
min. 1.083 (27.5)
max. .150 (3.8)
max.
∅
Cathode
.020 (0.52)
Mark
max.
∅
.079 (2.0)
DO-35
Dimensions are in inches and (millimeters)
1/20/99
SYMBOL MIN. TYP. MAX. UNIT
Thermal Resistance
R
thJA
– – 0.3
(1)
°C/W
Junction to Ambient Air
NOTES:
(1) Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature.
ZPD1 THRU ZPD75
ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Type
Zener Voltage
(1)
at
IZ= 5 mA
VZ(V)
at
IZ= 5 mA
f = 1 kHz
rzj(Ω)
at
IZ= 1 mA
f = 1 kHz
rzj(Ω)
Temp. Coeff.
of Zener Voltage
at
IZ= 5 mA
α
vz
(10–4/K)
Reverse
Voltage
at
IR= 100 nA
VR(V)
at
T
amb
= 45°C
IZ(mA)
at
T
amb
= 25°C
IZ(mA)
Dynamic Resistance
Admissible
Zener current
(2)
ZPD1
(3)
0.7 ... 0.8 6.5 (< 8) < 50 –26 ... –23 – 280 340
ZPD2.7 2.5 ... 2.9 75 (< 83) < 500 –9 ... –4 – 135 160
ZPD3 2.8 ... 3.2 80 (< 95) < 500 –9 ... –3 – 117 140
ZPD3.3 3.1 ... 3.5 80 (< 95) < 500 –8 ... –3 – 109 130
ZPD3.6 3.4 ... 3.8 80 (< 95) < 500 –8 ... –3 – 101 120
ZPD3.9 3.7 ... 4.1 80 (< 95) < 500 –7 ... –3 – 92 110
ZPD4.3 4.0 ... 4.6 80 (< 95) < 500 –6 ... –1 – 85 100
ZPD4.7 4.4 ... 5.0 70 (< 78) < 500 –5 ... +2 – 76 90
ZPD5.1 4.8 ... 5.4 30 (< 60) < 480 –3 ... +4 > 0.8 67 80
ZPD5.6 5.2 ... 6.0 10 (< 40) < 400 –2 ... +6 > 1 59 70
ZPD6.2 5.8 ... 6.6 4.8 (< 10) < 200 –1 ... +7 > 2 54 64
ZPD6.8 6.4 ... 7.2 4.5 (< 8) < 150 +2 ... +7 > 3 49 58
ZPD7.5 7.0 ... 7.9 4 (< 7) < 50 +3 ... +7 > 5 44 53
ZPD8.2 7.7 ... 8.7 4.5 (< 7) < 50 +4 ... +7 > 6 40 47
ZPD9.1 8.5 ... 9.6 4.8 (< 10) < 50 +5 ... +8 > 7 36 43
ZPD10 9.4 ... 10.6 5.2 (< 15) < 70 +5 ... +8 > 7.5 33 40
ZPD11 10.4 ... 11.6 6 (< 20) < 70 +5 ... +9 > 8.5 30 36
ZPD12 11.4 ... 12.7 7 (< 20) < 90 +6 ... +9 > 9 28 32
ZPD13 12.4 ... 14.1 9 (< 25) < 110 +7 ... +9 > 10 25 29
ZPD15 13.8 ... 15.6 11 (< 30) < 110 +7 ... +9 > 11 23 27
ZPD16 15.3 ... 17.1 13 (< 40) < 170 +8 ... +9.5 > 12 20 24
ZPD18 16.8 ... 19.1 18 (< 50) < 170 +8 ... +9.5 > 14 18 21
ZPD20 18.8 ... 21.2 20 (< 50) < 220 +8 ... +10 > 15 17 20
ZPD22 20.8 ... 23.3 25 (< 55) < 220 +8 ... +10 > 17 16 18
ZPD24 22.8 ... 25.6 28 (< 80) < 220 +8 ... +10 > 18 13 16
ZPD27 25.1 ... 28.9 30 (< 80) < 250 +8 ... +10 > 20 12 14
ZPD30 28 ... 32 35 (< 80) < 250 +8 ... +10 > 22.5 10 13
ZPD33 31 ... 35 40 (< 80) < 250 +8 ... +10 > 25 9 12
ZPD36 34 ... 38 40 (< 90) < 250 +8 ... +10 > 27 9 11
ZPD39 37 ... 41 50 (< 90) < 300 +10 ... +12 > 29 8 10
ZPD43 40 ... 46 60 (< 100) < 700 +10 ... +12 > 32 7 9.2
ZPD47 44 ... 50 70 (< 100) < 750 +10 ... +12 > 35 6 8.5
ZPD51 48 ... 54 70 (< 100) < 750 +10 ... +12 > 38 6 7.8
ZPD56 52.0 … 60.0
(4)
< 135
(4)
< 1000
(5)
typ. +10
(4)
–– –
ZPD62 58.0 … 66.0
(4)
< 150
(4)
< 1000
(5)
typ. +10
(4)
–– –
ZPD68 64.0 … 72.0
(4)
< 200
(4)
< 1000
(5)
typ. +10
(4)
–– –
ZPD75 70.0 … 79.0
(4)
< 250
(4)
< 1500
(5)
typ. +10
(4)
–– –
NOTES:
(1) Tested with pulses t
p
= 5 ms
(2) Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature
(3) The ZPD1 is a silicon diode operated in forward direction. Hence, the subscript of all parameters should be “F” instead of “Z”.
Connect the cathode terminal to the negative pole
(4) at I
Z
= 2.5 mA
(5) at I
Z
= 0.5 mA
RATINGS AND CHARACTERISTIC CURVES ZPD1 THRU ZPD75
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