General Semiconductor US1D, US1J, US1B, US1M, US1K Datasheet

0.157 (3.99)

0.177 (4.50)

0.006 (0.152)

0.012 (0.305)

0.030 (0.76)

0.060 (1.52)

0.008 (0.203)

MAX.

0.194 (4.93)

0.208 (5.28)

0.100 (2.54)

0.110 (2.79)

0.078 (1.98)

0.090 (2.29)

0.049 (1.25)

0.065 (1.65)

NEW PRODUCT NEW PRODUCT NEW PRODUCT

US1A THRU US1J

SURFACE MOUNT ULTRAFAST EFFICIENT RECTIFIER

Reverse Voltage - 50 to 600 Volts Forward Current - 1.0 Ampere

DO-214AC

Dimensions in inches and (millimeters)

FEATURES

♦ Plastic package has Underwriters Laboratory

Flammability Classification 94V-0

♦ For surface mount applications
♦ Glass passivated chip junctions
♦ Low profile package
♦ Easy pick and place
♦ Ultrafast recovery times for high efficiency
♦ Low forward voltage, low power loss
♦ Built-in strain relief, ideal for automated placement
♦ High temperature soldering guaranteed:

250°C/10 seconds on terminals

MECHANICAL DATA

Case: JEDEC DO-214AC molded plastic body over

passivated chip
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026

Polarity: Color band denotes cathode end
Weight: 0.002 ounces, 0.064 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

SYMBOLS US1A US1B US1D US1G US1J UNITS

Device Marking Code UA UB UD UG UJ
Maximum repetitive peak reverse voltage V
Maximum RMS voltage V
Maximum DC blocking voltage V
Maximum average forward rectified current

=110°C

at T

L

Peak forward surge current

8.3ms single half sine-wave superimposed on I
rated load (JEDEC Method)

Maximum instantaneous forward voltage at 1.0A V
Maximum DC reverse current T

at rated DC blocking voltage T
Maximum reverse recovery time
Typical junction capacitance
Maximum thermal resistance

(NOTE 2)

(NOTE 3)

Operating and storage temperature range T

NOTES:
(1) Reverse recovery test conditions:I

(2) Measured at 1.0 MH
(3) P.C.B. mounted on 0.2 x 0.2” (5.0 x 5.0mm) copper pad area

and applied reverse voltage of 4.0Volts

Z

=0.5A, IR=1.0A, Irr=0.25A

F

(NOTE 1)

RRM
RMS

DC

I

(AV)

FSM

F

=25°C 10.0

A

=100°C

A

I

R

t

rr

C

J

R

ΘJA

R

ΘJL

, T

J

STG

50 100 200 400 600 Volts
35 70 140 280 420 Volts
50 100 200 400 600 Volts

1.0 Amp

30.0 Amps

1.0 1.7 Volts

50.0

50.0 75.0 ns

17.0 15.0 pF

75.0

27.0

-55 to +150 °C

µA

°C/W

4/98

0.1 1 100

1

10

100

0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

0.001

0.01

0.1

1

10

0

20 40 60 80 100 120 140

0

0.2

1.0

0.6

0.8

1.0

1.2

150

110

25

10

15

20

30

0

5

100

10

0 20406080100

0.01

0.1

1

10

100

0.01 0.1 1 10 100

0.1

1

10

100

RATING AND CHARACTERISTIC CURVES US1A THRU US1J

FIG. 1 - FORWARD CURRENT DERATING CURVE

RESISTIVE OR INDUCTIVE LOAD

FIG.2 - MAXIMUM NON-REPETITIVE PEAK

FORWARD SURGE CURRENT

8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
TL=110°C

CURRENT, AMPERES

AVERAGE FORWARD RECTIFIED

AMPERES

0.2 x 0.2” (5.0 x 5.0mm)
COPPER PAD AREAS

LEAD TEMPERATURE, °C

FIG. 3 - TYPICAL INSTANTANEOUS FORWARD

CHARACTERISTICS

US1A THRU US1G

US1J - US1M

TJ=25°C
PULSE WIDTH=300µs
1% DUTY CYCLE

AMPERES

PEAK FORWARD SURGE CURRENT,

NUMBER OF CYCLES AT 60 Hz

FIG. 4 - TYPICAL REVERSE LEAKAGE

CHARACTERISTICS

TJ=150°C

TJ=125°C

TJ=100°C

MICROAMPERES

TJ=25°C

INSTANTANEOUS FORWARD CURRENT,

INSTANTANEOUS FORWARD VOLTAGE,

VOLTS

FIG. 5 - TYPICAL JUNCTION CAPACITANCE

US1A - US1G

US1J - US1M

JUNCTION CAPACITANCE, pF

REVERSE VOLT AGE, VOL TS

TJ=25°C
f=1.0 MH

Z

Vsiq=50mVp-p

INSTANTANEOUS REVERSE LEAKAGE CURRENT,

PERCENT OF RATED PEAK REVERSE

VOLTAGE, %

FIG. 6 - TYPICAL TRANSIENT THERMAL IMPEDANCE

TRANSIENT THERMAL IMPEDANCE (°C/W)

t, PULSE DURATION, sec