General Semiconductor UGF8DT, UGF8CT, UGF8AT, UGF8BT Datasheet
NEW PRODUCT NEW PRODUCT NEW PRODUCT
0.060 (1.52)
0.405 (10.27)
0.383 (9.72)
0.670 (17.2)
0.646 (16.4)
0.191 (4.85)
0.171 (4.35)
0.600 (15.5)
0.580 (14.5)
0.560 (14.22)
0.530 (13.46)
0.037 (0.94)
0.027 (0.69)
0.140 (3.56)
0.130 (3.30)
0.350 (8.89)
0.330 (8.38)
0.188 (4.77)
0.172 (4.36)
0.110 (2.80)
0.100 (2.54)
0.131 (3.39)
0.122 (3.08)
0.110 (2.80)
0.100 (2.54)
0.022 (0.55)
0.014 (0.36)
0.205 (5.20)
0.195 (4.95)
PIN 1
PIN 2
12
PIN
DI
DIA.
UGF8A T THRU UGF8DT
ULTRAFAST EFFICIENT PLASTIC RECTIFIER
Reverse Voltage - 50 to 200 Volts Forward Current - 8.0 Amperes
ITO-220AC
♦ Plastic package has Underwriters Laboratories
FEATURES
Flammability Classification 94V-0
♦ Ideally suited for use in very high frequency
switching power supplies, inverters and as a free
wheeling diode
♦ Ultrafast reverse
recovery time for high efficiency
♦ Soft recovery characteristics
♦ Excellent high temperature switching
♦ Glass passivated chip junction
♦ High temperature soldering guaranteed:
250°C, 0.25" (6.35mm) from case for 10 seconds
MECHANICAL DATA
Case: ITO-220AC molded plastic body
Terminals: Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity: As marked
Mounting Position: Any
Weight: 0.08 ounce, 2.24 grams
Dimensions in inches and (millimeters)
Mounting T orque: 5in. - lbs. max.
MAXIMUM RATINGS AND CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS UGF8AT UGF8BT UGF8CT UGF8DT UNITS
Maximum repetitive peak reverse voltage V
Maximum RMS voltage V
Maximum DC blocking voltage V
Maximum average forward rectified current
=100°C
at T
C
I
(AV)
RRM
RMS
DC
Peak forward surge current
8.3 ms single half sine-wave superimposed I
on rated load (JEDEC Method) at T
=100°C
C
FSM
Maximum instantaneous forward voltage at 8.0 1.00
20A
5.0A, T
Maximum DC reverse current T
at rated DC blocking voltage T
Maximum reverse recovery time
(NOTE 1)
Maximum reverse recovery time T
(NOTE 2)
A
A
J
TJ=100°C
Maximum recovered stored charge T
(NOTE 2)
Typical junction capacitance
Typical ther mal resistance
Operating junction and storage temperature range T
NOTES: (1) Reverse recovery test conditions:IF=0.5A, IR=1.0A, Irr=0.25A
(2) T
and Qrrmeasured at IF=8.0A, VR=30V, di/dt=50A/µs, Irr=10% I
rr
(3) Measured at 1.0 MHZand applied reverse voltage of 4.0 Volts
(4) Thermal resistance from junction to case
(NOTE 3)
(NOTE 4)
TJ=100°C
=150°C 0.95
J
=25°C 10.0
=100°C
=25°C 30.0
=25°C 20.0
J
for meaurement of t
RM
V
F
I
R
t
rr
t
rr
Q
rr
C
J
R
ΘJC
, T
J
STG
rr
50 100 150 200 Volts
35 70 105 140 Volts
50 100 150 200 Volts
8.0 Amps
150.0 Amps
1.20
300.0
20.0 ns
50.0
45.0
45.0 pF
5.0 °C/W
-55 to+150 °C
Volts
µA
ns
nC
4/98
0 25 50 75 100 125 150 175
0
2.0
4.0
6.0
8.0
10
12
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.01
0.1
1
10
100
0 25 50 75 100 125 150 175
0
10
20
30
40
50
60
1
10
100
10
100
1,000
0
20
40
60
80
100
0.01
0.1
1
10
100
1,000
0.01
0.1
1
10
100
0.1
1
10
100
RATINGS AND CHARACTERISTIC CURVES UGF8AT THRU UGF8DT
FIG. 1 - FORWARD CURRENT DERATING
CURVE
RESISTIVE OR INDUCTIVE LOAD
AMPERES
AVERAGE FORWARD RECTIFIED CURRENT,
AMBIENT TEMPERATURE, °C
FIG. 3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
TJ=25°C
PULSE WIDTH=300µs
1% DUTY CYCLE
AMPERES
PEAK FORWARD SURGE CURRENT,
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
TC=100°C
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
NUMBER OF CYCLES AT 60 Hz
FIG. 4 - TYPICAL REVERSE
CHARACTERISTICS
TJ=125°C
TJ=100°C
AMPERES
INSTANTANEOUS FORWARD CURRENT,
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
FIG. 5 - REVERSE SWITCHING
CHARACTERISTICS
IF=4.0A
V
=30V
R
di/dt= 150A/µs
RECOVER Y TIME nC/ns
RECOVERED STORED CHARGE/REVERSE
JUNCTION TEMPERATURE, °C
di/dt=100A/µs
di/dt=
di/dt=
di/dt=
di/dt=50A/µs
di/dt=
di/dt=20A/µs
20A/µs
50A/µs
100A/µs
150A/µs
MICROAMPERES
TJ=25°C
INSTANTANEOUS REVERSE LEAKAGE CURRENT,
PERCENT OF RATED PEAK REVERSE
VOLTAGE, %
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
TJ=25°C
f=1.0 MH
Z
Vsig=50mVp-p
JUNCTION CAPACITANCE, pF
REVERSE VOLTAGE, VOLTS
t
rr
Q
rr
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