General Semiconductor GF1A, GF1J, GF1G, GF1D, GF1B Datasheet

...

GF1A THRU GF1M

0.167 (4.24)

0.187 (4.75)

0.0065 (0.17)

0.0105 (0.27)

0.030 (0.76)

0.060 (1.52)

0.006

0.152 TYP.

0.196 (4.98)

0.226 (5.74)

0.094 (2.39)

0.114 (2.90)

0.106 (2.69)

0.118 (3.00)

0.040 (1.02)

0.060 (1.52)

0.098 (2.49)

0.108 (2.74)

SURFACE MOUNT GLASS PASSIVATED JUNCTION RECTIFIER

Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere

DO-214BA

PATENTED*

Dimensions in inches and (millimeters)

Patent No.3,996,602, brazed-lead assembly by Patent No. 3,930,306 and lead

Glass-plastic encapsulation technique is covered by

forming by Patent No. 5,151,846

FEATURES

♦ Plastic package has Underwriters Laboratory

Flammability Classification 94V-0

♦ Ideal for surface mount automotive applications ♦ High temperature metallurgically bonded construction ♦ Glass passivated cavity-free junction ♦ Capable of meeting environmental standards of

MIL-S-19500

♦ Built-in strain relief ♦ Easy pick and place ♦ High temperature soldering guaranteed: 450°C/5 seconds

at terminals

♦ Complete device submersible temperature of 265°C for

10 seconds in solder bath

MECHANICAL DATA

Case: JEDEC DO-214BA molded plastic over glass body Terminals: Solder plated, solderable per MIL-STD-750,

Method 2026

Polarity: Color band denotes cathode end Mounting Position: Any Weight: 0.0048 ounces, 0.120 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

Device marking code Maximum repetitive peak reverse voltage V Maximum RMS voltage V Maximum DC blocking voltage V Maximum average forward rectified current

=125°C

at T

Peak forward surge current

8.3ms single half sine-wave superimposed on I rated load (JEDEC Method)

Maximum instantaneous forward voltage at 1.0A V Maximum DC reverse current T

at rated DC blocking voltage T Typical reverse recovery time Typical junction capacitance Typical thermal resistance

Operating junction and storage temperature range T

NOTES: (1) Reverse recovery test conditions:IF=0.5A, IR=1.0A, Irr=0.25A (2) Measured at 1.0 MHz and applied V (3) Thermal resistance from junction to ambient and from junction to lead

P.C.B.mounted on 0.2 x 0.2” (5.0 x 5.0mm) copper pad areas

(NOTE 1)

(NOTE 2)

(NOTE 3)

=4.0 Volts

=25°C 5.0

=125°C

SYMBOLS GF1A GF1B GF1D GF1G GF1J GF1K GF1M UNITS

GA GB GD GG GJ GK GM

50 100 200 400 600 800 1000 Volts 35 70 140 280 420 560 700 Volts 50 100 200 400 600 800 1000 Volts

1.0 Amp

30.0 Amps

1.10 1.20 Volts

50.0

µA

2.0 µs

15.0 pF

80.0

26.0

°C/W

-65 to +175 °C

RRM RMS

(AV)

FSM

R R

, T

ΘJA ΘJL

STG

4/98

0.4 0.6 0.8 1.0 1.2 1.4 1.6

0.01

0.1

110100

5.0

110100

0.5

100 110 120 130 140 150 160 175

1.0

0 20406080100

0.01

0.1

0.01 0.1 1 10 100

0.1

100

RATINGS AND CHARACTERISTIC CURVES GF1A THRU GF1M

FIG. 1 - FORWARD CURRENT DERATING CURVE

60 H

RESISTIVE OR INDUCTIVE LOAD P.C.B.MOUNTED on

0.2 x 0.2” (5.0 x 5.0mm) COPPER PAD AREAS

AMPERES

AVERAGE FORWARD RECTIFIED CURRENT,

LEAD TEMPERATURE, °C

FIG. 3 - TYPICAL INSTANTANEOUS

FORWARD CHARACTERISTICS

PULSE WIDTH=300µs 1% DUTY CYCLE

TJ=25°C

FIG. 2 - MAXIMUM NON-REPETITIVE PEAK

FORWARD SURGE CURRENT

TJ=TJmax.

8.3ms SINGLE HALF SINE-WAVE (JEDEC Method)

AMPERES

PEAK FORWARD SURGE CURRENT,

NUMBER OF CYCLES AT 60 H

FIG. 4 - TYPICAL REVERSE CHARACTERISTICS

TJ=100°C

AMPERES

INSTANTANEOUS FORWARD CURRENT,

INSTANTANEOUS FORWARD VOLTAGE,

VOLTS

FIG. 5 - TYPICAL JUNCTION CAPACITANCE

TJ=25°C f=1.0 MH

Vsig=50mVp-p

MICROAMPERES

INSTANTANEOUS REVERSE CURRENT,

PERCENT OF RATED PEAK REVERSE

FIG. 6 - TYPICAL TRANSIENT THERMAL IMPEDANCE

MOUNTED ON 0.20 x 0.27” (5 x 7mm) COPPER PAD AREAS

TJ=25°C

VOLTAGE, %

JUNCTION CAPACITANCE, pF

REVERSE VOLT AGE, VOL TS

TRANSIENT THERMAL IMPEDANCE (°C/W)

t, PULSE DURATION, sec