General Semiconductor G3M, G3K, G3J, G3G, G3D Datasheet

Reverse Voltage - 50 to 1000 Volts Forward Current - 3.0 Amperes

0.250 (6.3)

0.170 (4.3)

0.052 (1.32)

0.048 (1.22)

DIA.

DIA.

1.0 (25.4)
MIN

MAX.

0.300 (7.6)

1.0 (25.4)
MIN

PATENTED*

Dimensions in inches and (millimeters)

*

Brazed-lead assembly is covered by Patent No.3,930,306

G3A THRU G3M

GLASS PASSIVATED JUNCTION RECTIFIER

Case Style G3

♦ High temperature metallurgically bonded

construction

♦ Glass passivated cavity-free junction
♦ Hermetically sealed package
♦ 3.0 Ampere operation

at TA=70°C with no
thermal runaway

♦ Typical IRless than 0.1µA
♦ Capable of meeting environmental standards of

MIL-S-19500

♦ High temperature soldering guaranteed:

350°C/10 seconds, 0.375" (9.5mm) lead length,
5 lbs. (2.3kg) tension

MECHANICAL DATA

Case: Solid glass body
Terminals: Solder plated axial leads, solderable per

MIL-STD-750, Method 2026

Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: 0.04 ounce, 1.1 grams

FEATURES

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

SYMBOLS G3A G3B G3D G3G G3J G3K G3M UNITS

Maximum repetitive peak reverse voltage V
Maximum RMS voltage V
Maximum DC blocking voltage V

RRM
RMS

DC

Maximum average forward rectified current

I

0.375” (9.5mm) lead length at T

=70°C

A

(AV)

Peak forward surge current

8.3ms single half sine-wave superimposed

I

FSM

on rated load (JEDEC Method)
Maximum instantaneous forward voltage at 3.0A V
Maximum full load reverse current, full cycle

average, 0.375” (9.5mm) lead length at T
Maximum DC reverse current T

at rated DC blocking voltage T
Typical reverse recovery time
Typical junction capacitance
Typical thermal resistance

(NOTE 1)

(NOTE 2

)R

(NOTE 3

=70°C

A

=25°C 5.0

A

=150°C

A

)C

Operating junction and storage temperature range T

NOTES:

(1) Measured with I
(2) Measured at 1.0 MH
(3) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5mm) lead length,

with both leads mounted between heatsinks

=0.5A, IR=1A, Irr=0.25A

F

and applied reverse voltage of 4.0 Volts

Z

F

I

R(AV)

I

R

t

rr

J

ΘJA

R

ΘJL

, T

J

STG

50 100 200 400 600 800 1000 Volts
35 70 140 280 420 560 700 Volts
50 100 200 400 600 800 1000 Volts

3.0 Amps

125.0 Amps

1.2 1.1 Volts

200.0 µA

100.0

µA

3.0 µs

40.0 pF

20.0

10.0

°C/W

-65 to +175 °C

4/98

0 25 50 75 100 125 150 175

0

1.0

2.0

3.0

4.0

110100

10

100

200

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

0.01

0.1

1

10

30

10

100

1 10 100

0 20 40 60 80 100

0.01

0.1

1

10

RATINGS AND CHARACTERISTIC CURVES G3A AND G3M

FIG. 1 - FORWARD CURRENT DERATING CURVE

60 H

Z

RESISTIVE OR
INDUCTIVE LOAD

FIG. 2 - MAXIMUM NON-REPETITIVE PEAK

FORWARD SURGE CURRENT

T

max.

J =TJ

8.3ms SINGLE HALF
SINE-WAVE(JEDEC Method)

CURRENT, AMPERES

AVERAGE FORWARD RECTIFIED

0.375" (9.5mm) LEAD LENGTH

AMBIENT TEMPERATURE, °C

FIG. 3 - TYPICAL INSTANTANEOUS

FORWARD CHARACTERISTICS

TJ=150°C

AMPERES

PULSE WIDTH=300µs
1% DUTY CYCLE

TJ=25°C

AMPERES

PEAK FORWARD SURG ECURRENT,

NUMBER OF CYCLES AT 60 H

FIG. 4 - TYPICAL REVERSE CHARACTERISTICS

Z

TJ=100°C

MICROAMPERES

INSTANTANEOUS REVERSE CURRENT,

TJ=75°C

TJ=25°C

INSTANTANEOUS FORWARD CURRENT,

INSTANTANEOUS FORWARD VOLTAGE,

VOLTS

FIG. 5 - TYPICAL JUNCTION CAPACITANCE

JUNCTION CAPACITANCE, pF

REVERSE VOLTAGE, VOLTS

TJ=25°C
f=1.0 MHz
Vsig=50mVp-p

PERCENT OF RATED PEAK REVERSE VOLTAGE, %