General Semiconductor BY229X-800, BY229X-600, BY229X-400, BY229X-200 Datasheet

BY229X SERIES

FAST SWITCHING PLASTIC RECTIFIER

Reverse Voltage - 50 to 600 Volts Forward Current - 8.0 Amperes

FEATURES

♦ Plastic package has Underwriters Laboratory

Flammability Classification 94V-0

♦ Glass passivated chip junction
♦ Low leakage, high voltage
♦ High surge current capability
♦ Superfast recover y time, for high efficiency
♦ High temperature soldering guaranteed:

250°C, 0.25" (6.35mm) from case for 10 seconds

MECHANICAL DATA

Case: JEDEC ITO-220AC fully overmolded plastic body

over passivated chip
Terminals: Plated lead solderable per MIL-STD-750,
Method 2026

Polarity: As marked
Mounting Position: Any
Weight: 0.064 ounce, 1.81 grams
Mounting T orque: 5 in. - lbs.max.

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

BY229X BY229X BY229X BY229X

SYMBOLS -200 -400 -600 -800 UNITS

Maximum recurrent peak reverse voltage V

RRM

200 400 600 800 Volts

Maximum RMS voltage V

RMS

140 280 420 560 Volts

Maximum DC blocking voltage V

DC

200 400 600 800 Volts

Maximum average forward rectified current
at T

C

=100°C

I

(AV)

8.0 Amps

Peak forward surge current

8.3ms single half sine-wave superimposed I

FSM

100 Amps

on rated load (JEDEC Method)
Maximum instantaneous forward voltage at 20A V

F

1.85 Volts

Maximum DC reverse current T

J

=25°C 10.0

at rated DC blocking voltage at T

J

=125°C

I

R

300

µA

Maximum reverse recovery time

(NOTE 1)

t

rr

145 ns

Maximum recovered stored charge

(NOTE 2)

Q

rr

700 nC

Maximum slope of reverse recovery current

(NOTE 2)

dir/dt 60 A/µs

Maximum thermal resistance

(NOTE 3)

R

ΘJC

4.8 °C/W

Typical thermal resistance, junction to air R

ΘJA

20 °C/W

Operating junction and storage temperature range T

J

, T

STG

-40 to +150 °C

RMS Isolation voltage from terminals to heatsink 4500

(NOTE 4)

with RH ≤ 30% V

ISOL

3500

(NOTE 5)

Volts

1500

(NOTE 6)

NOTES:

(1) Reverse recovery test conditions:IF=1A, VR=30V, di/dt=50A/µs, Irr=10% I

RM

(2) Qrrtest conditions: IF=2A, VR=30V, di/dt=20A/µs
(3) Thermal resistance from junction to case mounted on heatsink with heatsink compound
(4) Clip mounting, where lead does not overlap heatsink with 0.110” offset.
(5) Clip mounting, where leads do overlap heatsink.
(6) Screw mounting, where washer diameter is ≤ 4.9 mm (0.19”).

ITO-220AC

ADVANCED INFORMATION ADVANCED INFORMATION ADVANCED INFORMATION

10/12/98

Dimensions in inches and (millimeters)

0.405 (10.27)

0.383 (9.72)

0.140 (3.56)

0.130 (3.30)

0.188 (4.77)

0.172 (4.36)

0.110 (2.80)

0.100 (2.54)

0.131 (3.39)

DIA.

0.122 (3.08)

DIA.

0.600 (15.5)

0.580 (14.5)

0.560 (14.22)

0.530 (13.46)

PIN

12

0.191 (4.85)

0.171 (4.35)

0.060 (1.52)

0.676 (17.2)

0.646 (16.4)

0.350 (8.89)

0.330 (8.38)

0.110 (2.80)

0.100 (2.54)

0.205 (5.20)

0.195 (4.95)

0.037 (0.94)

0.027 (0.69)

PIN 1

PIN 2

0.022 (0.55)

0.014 (0.36)

FIG. 1 - MAXIMUM FORWARD CURRENT

DERATING CURVES

CASE AMBIENT TEMPERATURE, °C

AVERAGE FORWARD RECTIFIED

CURRENT, AMPERES

FIG. 2 - MAXIMUM NON-REPETITIVE PEAK

FORWARD SURGE CURRENT

NUMBER OF CYCLES AT 60 H

Z

PEAK FORWARD SURGE

CURRENT, AMPERES

FIG. 3 - TYPICAL INSTANTANEOUS

FORWARD CHARACTERISTICS

FIG. 4 - TYPICAL REVERSE LEAKAGE

CHARACTERISTICS

INSTANTANEOUS FORWARD CURRENT,

AMPERES

INSTANTANEOUS REVERSE LEAKAGE CURRENT,

MICROAMPERES

INSTANTANEOUS FORWARD VOLTAGE,

VOLTS

PERCENT OF RATED PEAK REVERSE

VOLTAGE, %

FIG. 5 - TYPICAL JUNCTION CAPACITANCE

Cj / pF

VR / V

TL=75°C

8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)

RESISTIVE OR
INDUCTIVE LOAD

TJ=150°C

TJ=25°C

TJ=100°C

TJ=125°C

TJ=150°C

TJ=125°C

TJ=100°C

TJ=25°C

RATINGS AND CHARACTERISTIC CURVES BY229X SERIES

12

10

8

6

4

2

0

0 50 100 150

100

10

1

0.1

0.4

0.8

1.0

0.6

1.2 1.4 1.6

1.8

2.0

150

125

100

75

50

25

0

1

1000

100

10

10

1

100

100

10

1

10

100

0.10

0.01

0 20406080100