General Semiconductor BS870 Datasheet

BS870

DMOS Transistors (N-Channel)

SOT-23

.122 (3.1)
.118 (3.0)

.016 (0.4)

3

12

.037(0.95).037(0.95)

.016 (0.4) .016 (0.4)

Dimensions in inches and (millimeters)

Pin configuration

1 = Gate, 2 = Source, 3 = Drain

Top View

)

.056 (1.43

max. .004 (0.1)

)

.052 (1.33

.007 (0.175)

.005 (0.125)

.102 (2.6)
.094 (2.4)

.045 (1.15)

FEATURES

High input i mpe dance

♦

High-speed s witc hing

♦

No minority carrier storage time

♦

CMOS logic com pat ib le input

♦

No thermal runaway

♦

No secondary break down

♦

.037 (0.95)

SOT-23 Plastic Package

Case:
Weight:

Marking

S70

MECHANICAL DATA

approx. 0.008 g

Ratings at

Drain-So urce Voltage V
Drain-Gate Voltage V
Gate-Source Voltage (pulsed) V
Drain Current (continuous) I
Po w er Dissi pation at T
Junction Temperature T
Storage Temperature Range T

1)

Devic e on fiberglass substr ate, see layout

Invers e Diode

Max. Forw a rd Current (cont inuous )
at T

ambient temperature unless otherwise specified

25 °C

= 50 °C P

SB

= 25 °C

amb

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Symbol Value Unit

DSS
DGS
GS

D

tot
j
S

60 V
60 V
± 20 V
250 mA

1)

0.310

W
150 °C
–65 t o +150 °C

Symbol Value Unit
I

F

0.3 A

Forward V oltage Drop (typ.)

= 0, IF = 0.3 A, Tj = 25 °C

at V

GS

4/98

V

F

0.85 V

Ratings at

ambient temperature unless otherwise specified

25 °C

BS870

ELECTRICAL CHARACTERISTICS

Symbol Min. T yp. Max. Unit

Drain-Source Breakdown Voltage
at I

= 100 µA, V

D

GS

= 0

Gate Threshold Voltage

= VDS , ID = 1 mA

at V

GS

Gate-Body Leakage Current
at V

= 15 V, VDS = 0

GS

Drain Cutoff Cu r re nt
at V

= 25 V, VGS = 0

DS

Drain-Source ON Resistance

= 10 V, ID = 200 mA

at V

GS

Thermal Resistance Junction to Subst rate
Back s id e

Thermal Resistance Junction to Ambient Air R
Forwar d Transconductance

at V

= 10 V, ID = 200 mA, f = 1 MHz

DS

Input Capacitance

= 10 V, VGS = 0, f = 1 MHz

at V

DS

Switching Times

= 10 V, VDS = 10 V, RD = 100

at V

GS

Ω

Tur n-On Time
Tur n-Off Time

1)

Devi ce on fiberglass substr ate, see lay out

V

(BR)DSS

V

GS(th)

I

GSS

I

DSS

R

DS(ON)

R

thSB

thJA

g

m

C

iss

t

on

t

off

60 80 – V

1.0 2 3.0 V

––10

nA

––0.5µA

–3.55.0

Ω

––3201)K/W

––4501)K/W
– 200 – mS

–30–pF

–
–

5
25

–
–

ns
ns

.30 (7.5)

.12 (3)

.04 (1)

.08 (2)
.04 (1)

.59 (15)

.03 (0.8)

.47 (12)

0.2 (5)

Layout fo r R

thJA

.06 (1.5)

.20 (5.1)

test

.08 (2)

Dimensions in inches (millimeters)

Thickness: Fiberglass 0.059 in (1.5 mm)

Copper leads 0.012 in (0.3 mm)