General Semiconductor BS828 Datasheet
BS828
DMOS Transistors (N-Channel)
SOT-23
.122 (3.1)
.118 (3.0)
.016 (0.4)
3
12
.037(0.95).037(0.95)
.016 (0.4) .016 (0.4)
Dimensions in inches and (millimeters)
Pin configuration
1 = Gate, 2 = Source, 3 = Drain
Top View
)
.056 (1.43
max. .004 (0.1)
)
.052 (1.33
.007 (0.175)
.005 (0.125)
.102 (2.6)
.094 (2.4)
.045 (1.15)
FEATURES
♦ High breakdown v ol tage
♦ High input impedance
♦ High-speed switching
♦ No minority carrier storage time
♦ CMOS logic compatible i nput
♦ No thermal runawa y
♦ No secondary breakdown
♦ Specially suited f or tele phone subsets
.037 (0.95)
Case: SOT-23 Plastic Package
Weight: approx. 0. 008 g
Marking
S28
MECHANICAL DATA
Ratings at
Drain-So urce Voltage V
Drain-Gate Voltage V
Gate-Source Voltage (pulsed) V
Drain Current (continuous) I
Po w er Dissi pation at T
Junction Temperature T
Storage Temperature Range T
1)
Devic e on fiberglass substr ate, see layout
Invers e Diode
Max. Forw a rd Current (cont inuous )
at T
Forward V oltage Drop (typ.)
at V
ambient temperature unless otherwise specified
25 °C
= 50 °C P
SB
= 25 °C
amb
= 0, IF = 0.3 A, Tj = 25 °C
GS
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Symbol Value Unit
DSS
DGS
GS
D
tot
j
S
240 V
240 V
± 20 V
230 mA
1)
0.310
W
150 °C
–65 t o +150 °C
Symbol Value Unit
I
F
V
F
0.3 A
0.85 V
4/98
Ratings at
ambient temperature unless otherwise specified
25 °C
BS828
ELECTRICAL CHARACTERISTICS
Symbol Min. Typ . Max. Unit
Drain-Source Bre akdo wn Voltage
at I
= 100 µA, V
D
GS
= 0
Gate-Body Leakage Curre nt
= 15 V, VDS = 0
at V
GS
Drain Cut off Current
= 130 V, VGS = 0
at V
DS
= 70 V, VGS = 0.2 V
at V
DS
Gate-Source Threshold Voltage
= VDS, ID = 1 mA
at V
GS
Drain-Source ON Resis tance
= 2.8 V, ID = 100 mA
at V
GS
Thermal Resistance Junction to Substr ate
Back s i de
Thermal Resistance Junction to Ambient Air R
Capacitances
= 20 V, VGS = 0, f = 1 MHz
at V
DS
Input Capa ci ta nce
Output Capacitance
Feedbac k Capacitance
Switching Times
= 10 V, VDS = 10 V, RD = 100
at V
GS
Ω
Turn-On Time
Turn-Off Time
1)
Device on fibergl ass substr ate, see layout
V
(BR)DSS
I
GSS
I
DSS
I
DSX
V
GS(th)
R
DS(ON)
R
thSB
thJA
C
iss
C
oss
C
rss
t
on
t
off
240 250 – V
––10nA
–
–
–
–
1
25
A
µ
A
µ
–1.52.5V
–5.58
– – 320
– – 450
–
–
–
–
–
80
20
5
5
50
1)
1)
–
–
–
–
–
Ω
K/W
K/W
pF
pF
pF
ns
ns
.30 (7.5)
.12 (3)
.04 (1)
.08 (2)
.04 (1)
.59 (15)
.03 (0.8)
.47 (12)
0.2 (5)
Layout for R
thJA
.06 (1.5)
.20 (5.1)
test
.08 (2)
Dimensions in inches (millimeters)
Thickness: Fiberglass 0.059 in (1.5 mm)
Copper leads 0.012 in (0.3 mm)
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