General Semiconductor BS809 Datasheet
BS809
DMOS Transistors (N-Channel)
SOT-23
.122 (3.1)
.118 (3.0)
.016 (0.4)
3
12
.037(0.95).037(0.95)
.016 (0.4) .016 (0.4)
Dimensions in inches and (millimeters)
Pin configuration
1 = Gate, 2 = Source, 3 = Drain
Top View
)
.056 (1.43
max. .004 (0.1)
)
.052 (1.33
.007 (0.175)
.005 (0.125)
.102 (2.6)
.094 (2.4)
.045 (1.15)
FEATURES
♦ High input impedance
♦ Low gate threshold v olt age
♦ Low drain-so urce ON resist ance
♦ High-speed s witching
♦ No minority carrier storage time
♦ CMOS logic compatible in put
♦ No thermal runawa y
♦ No secondary breakdown
.037 (0.95)
SOT-23 Plastic Package
Case:
Weight:
Marking
S09
MECHANICAL DATA
approx. 0.008 g
Ratings at
Drain-Source Voltage V
Drain-Gate Voltage V
Gate-Source Voltage (pulsed) V
Drain Cur rent (continuous) at T
Power Dissipation at T
Junction Temperature T
Storage Temperature Range T
1)
Device on fiberglas s substrat e, see la y out
Inverse Diode
Max. For ward Current (continuous) at T
Forwar d Voltage Drop (typ.)at V
ambient temperature unless otherwise specified
25 °C
= 50 °C I
SB
= 50 °C P
SB
= 0, IF = 0.3 A, Tj = 25 °C V
GS
= 25 °C I
amb
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Symbol V alue Unit
DSS
DGS
GS
D
tot
j
S
400 V
400 V
±20 V
100 mA
1)
310
mW
150 °C
–65 to +150 °C
Symbol Value Unit
F
F
300 mA
1.0 V
4/98
Ratings at
ambient temperature unless otherwise specified
25 °C
BS809
ELECTRICAL CHARACTERISTICS
Symbol Min. Typ. Max. Unit
Drain-Source Breakdo wn Voltage
at I
= 100 µA, VGS = 0 V
D
Gate-Body Leakage Current , F orwa rd
at V
= 20 V, VDS = 0 V
GSF
Gate-Body Leakage Current , Re v erse
at V
= 20 V, VDS = 0 V
GSR
Drain Cutoff Curr ent
= 400 V, VGS = 0 V
at V
DS
Gate-Source Threshold Voltage
= VDS, ID = 250 µA
at V
GS
Drain-Source ON Resis tance
= 5 V, ID = 100 mA
at V
GS
Capacitances
= 25 V, VGS = 0 V, f = 1 MHz
at V
DS
Input Capacit ance
Output Capacitance
Feedbac k Capacitance
Switching Times
= 10 V, VDS = 10 V, RD = 100
at V
GS
Ω
Turn-On Time
Turn-Off Time
Thermal Resistance Junction t o Substrat e
Backside
V
(BR)DSS
I
GSSF
I
GSSR
I
DSS
V
GS(th)
R
DS(on)
C
iSS
C
OSS
C
rS
t
on
t
off
R
thSB
400 430 – V
– – 100 nA
– – 100 nA
– – 500 nA
11.52.5V
–1822
–
–
–
–
–
80
20
10
10
50
–
–
–
–
–
320
1)
Ω
pF
pF
pF
ns
ns
Thermal Resistance Junction t o Ambient Air R
1)
Device on fiberglas s subst rate , see la y out
.30 (7.5)
.12 (3)
.04 (1)
.08 (2)
.04 (1)
.59 (15)
.03 (0.8)
.47 (12)
.08 (2)
Layout for R
Thickness: Fibergla ss 0.059 in (1.5 mm)
0.2 (5)
.06 (1.5)
.20 (5.1)
Dimensions in inches (millimeters)
thJA
thJA
test
– – 450
Copper leads 0.012 in (0.3 mm)
1)
K/W
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