General Semiconductor BS250 Datasheet
BS250
DMOS Transistors (P-Channel)
Ratings at
TO-92
.181 (4.6)
.181 (4.6)
min. .492 (12.5)
.022 (0.55)
∅
max.
.098 (2.5)
D
G
Dimensions in inches and (millimeters)
.142 (3.6)
S
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
ambient temperature unless otherwise specified
25 °C
FEATURES
High input impedance
♦
High-speed s witching
♦
No minority carrier st orage t ime
♦
CMOS logic compatible inpu t
♦
No thermal runaway
♦
No secondary breakdown
♦
MECHANICAL DATA
TO-92 Plasti c Package
Case:
Weight:
On special request, this transistor is also manufactured
in the pin c onfiguration T O-18.
approx. 0.18 g
Symbol Value Unit
Drain-Source Voltage –V
Drain-Gate Voltage –V
Gate-Source Voltage (pulsed) V
Drain Current (continuous) –I
Po w er Dissi pation at T
= 25 °C P
amb
Junction Temperature T
Storage Temperature Range T
1)
Valid provided that leads are kept at ambient temperat ure at a distance o f 2 mm from case.
DSS
DGS
GS
D
tot
j
S
Invers e Diode
Symbol Value Unit
Max. Forw a rd Current (cont inuous )
amb
= 25 °C
at T
Forward V oltage Drop (typ.)
= 0, IF = 0.12 A, Tj = 25 °C
at V
GS
I
F
V
F
60 V
60 V
± 20 V
250 mA
1)
0.83
W
150 °C
–65 t o +150 °C
0.3 A
0.85 V
4/98
Ratings at
ambient temperature unless otherwise specified
25 °C
BS250
ELECTRICAL CHARACTERISTICS
Symbol Min. Typ. Max. Unit
Drain-Source Breakdo wn Voltage
at –I
= 100 µA, V
D
GS
= 0
Gate Threshold Voltage
= VDS, –ID = 1 mA
at V
GS
Gate-Body Leakage Current
at –V
Drain Cutoff Curr ent at –V
= 15 V, VDS = 0
GS
= 25 V, VGS = 0 –I
DS
Drain-Source ON Resis tance
at –V
= 10 V, –ID = 0.2 A
GS
Thermal Resistance Junction t o Ambient Air R
Forw ard Transconductance
at –V
= 10 V, –ID = 0.2 A, f = 1 MHz
DS
Input Capacit ance
at –V
= 10 V, VGS = 0, f = 1 MHz
DS
–V
(BR)DSS
–V
GS(th)
–I
GSS
DSS
R
DS(ON)
thJA
g
m
C
iss
60 70 – V
1.0 2.0 3.0 V
––20
––0.5µA
–3.55.0
– – 150
– 150 – mS
–60–pF
Switching Times
at –V
Turn-On Tim e
Turn-Off Time
1)
= 10 V, –VDS = 10 V, RD = 100
GS
Ω
t
on
t
off
–
–
5
25
Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
nA
Ω
1)
–
–
K/W
ns
ns
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