General Semiconductor BS223 Datasheet
BS223
DMOS Transistors (P-Channel)
Ratings at
TO-92
.181 (4.6)
.181 (4.6)
min. .492 (12.5)
.022 (0.55)
∅
max.
.098 (2.5)
D
G
Dimensions in inches and (millimeters)
.142 (3.6)
S
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
ambient temperature unless otherwise specified
25 °C
FEATURES
High input impedance
♦
Low gate th reshold voltage
♦
Low drain-sour ce ON resista nce
♦
High-speed s witching
♦
No minority carrier storage time
♦
CMOS logic compatible inpu t
♦
No thermal runaway
♦
No secondary breakdown
♦
MECHANICAL DATA
TO-92 Plasti c Package
Case:
Weight:
approx. 0.18 g
Symbol V al ue Unit
Drain-So urce Voltage –V
Drain-Gate Voltage –V
Gate-Source Voltage (pulsed) V
Drain Current (continuous) at T
Po w er Dissi pation at T
= 25 °C P
amb
= 25 °C –I
amb
Junction Temperature T
Storage Temperature Range T
1)
Valid provided that leads are kept at ambient temperat ure at a distance o f 2 mm from case.
DSS
DGS
GS
D
tot
j
S
Invers e Diode
Symbol Value Unit
Max. Forw a rd Current (cont inuous )
= 25 °C
at T
amb
Forward V oltage Drop (typ.)
= 0 V, IF = 1 mA, Tj = 25 °C
at V
GS
I
F
V
F
60 V
60 V
±20 V
1A
1)
830
mW
150 °C
–65 to +150 °C
1A
1.0 V
4/98
Ratings at
ambient temperature unless otherwise specified
25 °C
BS223
ELECTRICAL CHARACTERISTICS
Symbol Min. Typ. Max. Unit
Drain-Source Breakdo wn Voltage
= 100 µA, VGS = 0 V
at –I
D
Gate-Body Leakage Current , F orwa rd
at –V
= 20 V, VDS = 0 V
GSF
Gate-Body Leakage Current , Re v erse
at –V
= 20 V, VDS = 0 V
GSR
Drain Cutoff Curr ent
at –V
= 60 V, VGS = 0 V
DS
Gate-Source Threshold Voltage
= VDS, –ID = 250 µA
at V
GS
Drain-Source ON Resis tance
at –V
= 10 V, –ID = 600 mA
GS
–V
(BR)DSS
–I
GSSF
–I
GSSR
–I
DSS
–V
GS(th)
R
DS(on)
60 70 – V
– – 500 nA
– – 500 nA
– – 250
11.53V
–0.70.8
Capacitance
at –V
Input Capacit ance
Output Capacit ance
Feedbac k Capacitance
= 25 V, VGS = 0 V, f = 1 MHz
DS
C
C
C
iSS
OSS
rSS
–
–
–
350
150
35
Switching Times
at –V
Turn-On Tim e
Turn-Off Time
Thermal Resistance Junction t o Ambient Air R
1)
= 10 V, –VDS = 10 V, RD = 100
GS
Ω
t
t
on
off
thJA
–
–
40
100
– – 150
Valid provided that leads are k ept at ambient temperature at a distance of 2 mm from case .
A
µ
Ω
–
–
–
–
–
1)
pF
pF
pF
ns
ns
K/W
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