General Semiconductor BS123 Datasheet
BS123
DMOS Transistors (N-Channel)
Ratings at
TO-92
.181 (4.6)
.181 (4.6)
min. .492 (12.5)
.022 (0.55)
∅
max.
.098 (2.5)
D
G
Dimensions in inches and (millimeters)
.142 (3.6)
S
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
ambient temperature unless otherwise specified
25 °C
FEATURES
♦ High input impedance
♦ Low gate threshold voltage
♦ Low drain-source ON resistance
♦ High-speed switching
♦ No minority carrier storage time
♦ CMOS logic compatible input
♦ No thermal runaway
♦ No secondary breakdown
MECHANICAL DATA
TO-92 Plasti c Package
Case:
Weight:
approx. 0.18 g
Symbol V al ue Unit
Drain-So urce Voltage V
Drain-Gate Voltage V
Gate-Source Voltage (pulsed) V
Drain Current (continuous) at T
1)
Power Dissipation at T
= 25 °C, at T
amb
1)
= 25 °C, at T
amb
SB
2)
2)
= 50 °C I
SB
= 50 °C P
Junction Temperature T
Storage Temperature Range T
1)
Valid provided that leads are kept at ambient temperat ure at a distance o f 2 mm from case (for TO-92).
DSS
DGS
GS
D
tot
j
S
60 V
60 V
±20 V
1.1 A
1)
830
150 °C
–65 to +150 °C
mW
4/98
Ratings at
ambient temperature unless otherwise specified
25 °C
BS123
ELECTRICAL CHARACTERISTICS
Symbol Min. Typ. Max. Unit
Drain-Source Breakdo wn Voltage
at I
= 100 µA, VGS = 0 V
D
Gate-Body Leakage Current , F orwa rd
at V
= 20 V, VDS = 0 V
GSF
Gate-Body Leakage Current , Re v erse
at V
= 20 V, VDS = 0 V
GSR
Drain Cutoff Curr ent
= 60 V, VGS = 0 V
at V
DS
Gate-Source Threshold Voltage
= VDS, ID = 250 µA
at V
GS
Drain-Source ON Resis tance
= 10 V, ID = 600 mA
at V
GS
Capacitance
= 25 V, VGS = 0 V, f = 1 MHz
at V
DS
Input Capacit ance
Output Capacitance
Feedbac k Capacitance
Switching Times
= 10 V, VDS = 10 V, RD = 100
at V
GS
Ω
Turn-On Time
Turn-Off Time
Thermal Resistance Junction t o Ambient Air R
V
(BR)DSS
I
GSSF
I
GSSR
I
DSS
V
GS(th)
R
DS(on)
C
iSS
C
OSS
C
rSS
t
on
t
off
thJA
60 80 – V
– – 500 nA
– – 500 nA
– – 250
A
µ
11.53V
–0.30.4
–
–
–
–
–
– – 150
350
150
35
40
100
–
–
–
–
–
1)
Ω
pF
pF
pF
ns
ns
K/W
1)
Valid provided that leads are kept at ambient temperat ure at a distance o f 2 mm from case (for TO-92).
Inver se Diode
Symbol V alue Unit
Max. F o rward Current (co ntinuous)
= 25 °C
at T
amb
Forw ard Voltage Drop (typ.)
= 0 V, IF = 1.1 A, Tj = 25 °C
at V
GS
I
F
V
F
1.1 A
1V
Loading...