General Semiconductor BS109 Datasheet
BS109
DMOS Transistors (N-Channel)
Ratings at
TO-92
.181 (4.6)
.181 (4.6)
min. .492 (12.5)
.022 (0.55)
∅
max.
.098 (2.5)
D
G
Dimensions in inches and (millimeters)
.142 (3.6)
S
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
ambient temperature unless otherwise specified
25 °C
FEATURES
♦ High input impedance
♦ Low gate threshold voltage
♦ Low drain-source ON resistance
♦ High-speed switching
♦ No minority carrier storage time
♦ CMOS logic compatible input
♦ No thermal runaway
♦ No secondary breakdown
MECHANICAL DATA
TO-92 Plasti c Package
Case:
Weight:
approx. 0.18 g
Symbol V al ue Unit
Drain-So urce Voltage V
Drain-Gate Voltage V
Gate-Source Voltage (pulsed) V
Drain Current (continuous) at T
Po w er Dissi pation at T
= 25 °C P
amb
= 25 °C I
amb
Junction Temperature T
Storage Temperature Range T
1)
Valid provided that leads are kept at ambient temperat ure at a distance o f 2 mm from case.
DSS
DGS
GS
D
tot
j
S
Invers e Diode
Symbol Value Unit
Max. Forw a rd Current (cont inuous )
= 25 °C
at T
amb
Forward V oltage Drop (typ.)
= 0 V, IF = 400 mA, Tj = 25 °C
at V
GS
I
F
V
F
400 V
400 V
±20 V
120 mA
1)
830
mW
150 °C
–65 to +150 °C
400 mA
1.0 V
4/98
Ratings at
ambient temperature unless otherwise specified
25 °C
BS109
ELECTRICAL CHARACTERISTICS
Symbol Min. Typ. Max. Unit
Drain-Source B reakdow n Voltage
at I
= 100 µA, VGS = 0 V
D
Gate-Body Leakage Current , For w ard
at V
= 20 V, VDS = 0 V
GSF
Gate-Body Leakage Cur rent, Re v erse
at V
= 20 V, VDS = 0 V
GSR
Drain Cutoff Cur rent
= 400 V, VGS = 0 V
at V
DS
Gate-Source Thresh old Voltage
= VDS, ID = 250 µA
at V
GS
Drain-Sou rce ON Resistance
= 10 V, ID = 120 mA
at V
GS
V
(BR)DSS
I
GSSF
I
GSSR
I
DSS
V
GS(th)
R
DS(on)
400 430 – V
– – 100 nA
– – 100 nA
– – 500 nA
11.52.5V
–1622
Capacitance
= 25 V, VGS = 0, f = 1 MHz
at V
DS
Input Capacitance
Output Capacitance
Feedbac k Capacitance
C
C
C
iSS
OSS
rSS
–
–
–
80
20
10
Switching Times
= 10 V, VDS = 10 V, RD = 100
at V
GS
Turn-On Time
Turn-Off Time
Thermal Resistance Junction to Ambient A i r R
1)
Val id pro vided that leads are kept at ambient tempera ture at a distan ce of 2 mm from case.
Ω
t
t
on
off
thJA
–
–
10
50
– – 150
Ω
–
–
–
–
–
1)
pF
pF
pF
ns
ns
K/W
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