General Semiconductor BS108 Datasheet
BS108
DMOS Transistors (N-Channel)
Ratings at
TO-92
.181 (4.6)
.181 (4.6)
min. .492 (12.5)
.022 (0.55)
∅
max.
.098 (2.5)
D
G
Dimensions in inches and (millimeters)
.142 (3.6)
S
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
ambient temperature unless otherwise specified
25 °C
FEATURES
♦ High breakdown v ol tage
♦ High input impedance
♦ Low gate threshold v o ltage
♦ Low dr ai n-source ON resistance
♦ High-speed switching
♦ No minority carrier storage time
♦ CMOS logic c omp atible input
♦ No thermal runawa y
♦ No secondary breakdown
♦ Specially suited f or tele phone subsets
MECHANICAL DATA
TO-92 Plasti c Package
Case:
Weight:
On special request, this transistor is also manufactured in the pin confi guration TO-18.
approx. 0.18 g
Symbol Value Unit
Drain-So urce Voltage V
Drain-Gate Voltage V
Gate-Source Voltage (pulsed) V
Drain Current (continuous) I
Po w er Dissi pation at T
= 25 °C P
amb
Junction Temperature T
Storage Temperature Range T
1)
Valid provided that leads are kept at ambient temperat ure at a distance o f 2 mm from case
DSS
DGS
GS
D
tot
j
S
Invers e Diode
Symbol Value Unit
Max. Forw a rd Current (cont inuous )
= 25 °C
at T
amb
Forward V oltage Drop (typ.)
= 0, IF = 0.75 A, Tj = 25 °C
at V
GS
I
F
V
F
240 V
240 V
±20 V
230 mA
1)
0.83
W
150 °C
–65 to +150 °C
0.75 A
0.85 V
4/98
Ratings at
ambient temperature unless otherwise specified
25 °C
BS108
ELECTRICAL CHARACTERISTICS
Symbol Min. Typ. Max. Unit
Drain-Source B reakdow n Voltage
at I
= 100 µA, VGS = 0
D
Gate-Body Leakage Current
= 15 V, VDS = 0
at V
GS
V
(BR)DSS
I
GSS
240 250 – V
––10nA
Drain Cutoff Cur rent
at V
= 130 V, VGS = 0
DS
= 70 V, VGS = 0.2 V
at V
DS
Gate-Source Thresh old Voltage
= VDS, ID = 1 mA
at V
GS
Drain-Sou rce ON Resistance
= 2.8 V, ID = 100 mA
at V
GS
Thermal Resistance Junction to Ambient A i r R
I
DSS
I
DSX
V
GS(th)
R
DS(ON)
thJA
–
–
–
–
0.81.52.5V
–5.58
– – 150
Capacitance
= 20 V, VGS = 0, f = 1 MHz
at V
DS
Input Capacitance
Output Capacitance
Feedbac k Capacitance
C
C
C
iSS
OSS
rSS
–
–
–
80
20
5
Switching Times
= 10 V, VDS = 10 V, RD = 100
at V
GS
Turn-On Time
Turn-Off Time
1)
Val id pro vided that leads are kept at ambient tempera ture at a distan ce of 2 mm from case
Ω
t
on
t
off
–
–
5
50
1
25
–
–
–
–
–
A
µ
A
µ
Ω
1)
K/W
pF
pF
pF
ns
ns
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