General Semiconductor BF423, BF421 Datasheet
BF421, BF423
Small Signal Transistors (PNP)
Ratings at
TO-92
.181 (4.6)
.181 (4.6)
min. .492 (12.5)
∅
.022 (0.55)
max.
.098 (2.5)
E
C
Dimensions in inches and (millimeters)
.142 (3.6)
B
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
ambient temperature unless otherwise specified
25 °C
FEATURES
♦
PNP Silicon Epitaxial Transistors
especially suited for application in
class-B video output stages of TV
receivers and monit ors .
As complementary types, the NPN tran-
♦
sistors BF420 and BF422 are recommended.
MECHANICAL DATA
TO-92 Plasti c Package
Case:
Weight:
approx. 0.18 g
Symbol Value Unit
Collector-Base Voltage BF421
BF423
Collector-Emitter Voltage BF423 –V
Collector-Emitter Voltage BF421 –V
Emitter-Base Voltage –V
Collector Current –I
Peak Collector Current –I
Power Dissipation at T
= 25 °C P
amb
Junction Temperature T
Storage Temperature Range T
1)
Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
–V
–V
C
CM
tot
j
S
CBO
CBO
CEO
CER
EBO
300
250
250 V
300 V
5V
50 mA
100 mA
1)
830
150 °C
–65 to +150 °C
V
V
mW
4/98
Ratings at
ambient temperature unless otherwise specified
25 °C
BF421, BF423
ELECTRICAL CHARACTERISTICS
Symbol Min. Typ. Max. Unit
Collector-Base Brea kdown Volt age BF421
at –I
= 100 µA, IE = 0 BF423
C
Collector-Emitter Breakdown Voltage BF423
= 10 mA, IB = 0
at –I
C
Collector-Emitter Breakdown Voltage BF421
at R
= 2.7 kΩ, at –IC = 10 mA
BE
Emitter-Base Breakdown Voltage
= 100 µA, IC = 0
at –I
E
Collector-Base Cutoff Current
at –V
= 200 V, IE = 0
CB
Collector-Em i tter Cutoff Current
= 2.7 kΩ, –VCE = 250 V
at R
BE
= 2.7 kΩ, –VCE = 200 V, Tj = 150 °C
at R
BE
Collector Saturation Voltage
= 30 mA, –IB = 5 mA
at –I
C
DC Current Gain
at –V
= 20 V, –IC = 25 mA
CE
Gain-Bandwidth Product
at –V
= 10 V, –IC = 10 mA
CE
–V
(BR)CBO
–V
(BR)CBO
–V
(BR)CEO
–V
(BR)CER
–V
(BR)EBO
–I
CBO
–I
CER
–I
CER
–V
CEsat
h
FE
f
T
300
250
–
–
–
–
V
V
250 – – V
300––V
5––V
––10nA
50
10
nA
µ
A
––0.8V
50–––
60––MHz
Feedback Capacitance
at –V
= 30 V, –IC = 0, f = 1 MHz
CE
Thermal Resistance Junction to Ambient Air R
1)
Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
C
re
thJA
––1.6pF
– – 150
1)
K/W
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