General Semiconductor BF422, BF420 Datasheet
BF420, BF422
Small Signal Transistor s (NPN)
Ratings at
TO-92
.181 (4.6)
.181 (4.6)
min. .492 (12.5)
.022 (0.55)
∅
max.
.098 (2.5)
E
C
Dimensions in inches and (millimeters)
.142 (3.6)
B
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
ambient temperature unless otherwise specified
25 °C
FEATURES
NPN Silicon Epitaxial Planar Transistors
♦
especially suited for applicat i on in class-B
video output stages of TV receivers and
monitors.
♦
As complementary types, the PNP
transistors BF421 and BF423 are
recommended
MECHANICAL DATA
TO-92 Plasti c Package
Case:
Weight:
approx. 0.18 g
Symbol Value Unit
Collector-Base V oltage BF420
BF422
Collector-Emitter Voltage BF422 V
Collector-Emitter Voltage BF420 V
Emitter-Base Voltage V
Collector Current I
Peak Collector Current I
Power Dissipation at T
= 25 °C P
amb
Junction Temperature T
Storage Temperature Range T
1)
Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case
V
V
C
CM
CBO
CBO
CEO
CER
EBO
tot
j
S
300
250
250 V
300 V
5V
50 mA
100 mA
830
150 °C
–65 to +150 °C
V
V
1)
mW
4/98
Ratings at
ambient temperature unless otherwise specified
25 °C
BF420, BF422
ELECTRICAL CHARACTERISTICS
Symbol Min. Typ. Max. Unit
Collector-Base Breakdown Voltage BF420
at I
= 100 µA, IB = 0 BF422
C
Collector-Emitter Brea kdown Voltage BF422
at I
= 10 mA, IE = 0
C
Collector-Emitter Brea kdown Voltage BF420
at R
= 2.7 kΩ, IC = 10 mA
BE
Emitter-Base Breakdown Voltage
= 100 µA, IB = 0
at I
E
Collector-Base Cutof f Current
= 200 V, IE = 0
at V
CB
Collector-Emitter Cutoff Current
= 2.7 kΩ, VCE = 250 V
at R
BE
= 2.7 kΩ, VCE = 200 V, Tj = 150 °C
at R
BE
Collector Saturation Voltage
= 30 mA, IB = 5 mA
at I
C
DC Current Gain
= 20 V, IC = 25 mA
at V
CE
Gain-Bandwidth Product
= 10 V, IC = 10 mA
at V
CE
V
(BR)CBO
V
(BR)CBO
V
(BR)CEO
V
(BR)CER
V
(BR)EBO
I
CBO
I
CER
I
CER
V
CEsat
h
FE
f
T
300
250
–
–
–
–
V
V
250 – – V
300 – – V
5––V
––10nA
50
10
nA
µ
A
––0.6V
50 – – –
60 – – MHz
Feedbac k Capac i tance
= 30 V, IC = 0, f = 1 MHz
at V
CE
Thermal Resistance Junction to Ambient Air R
1)
Val id provided that leads are kept at ambient temperature at a distance of 2 mm from case
C
re
thJA
––1.6pF
– – 150
1)
K/W
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